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M65KG512AB6W9 - 512Mbit (4 banks x 8 Mb x 16) 1.8 V supply, DDR low power SDRAM

M65KG512AB6W9_4320741.PDF Datasheet


 Full text search : 512Mbit (4 banks x 8 Mb x 16) 1.8 V supply, DDR low power SDRAM
 Product Description search : 512Mbit (4 banks x 8 Mb x 16) 1.8 V supply, DDR low power SDRAM


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PART Description Maker
M65KG512AB6W9 M65KG512AB M65KG512AB6W8 M65KG512AB8 512Mbit (4 banks x 8 Mb x 16) 1.8 V supply, DDR low power SDRAM
STMicroelectronics
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DDP 512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL 12兆内00万16 × 4银行同步DRAM LVTTL
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
MT41J64M16JT MT41J128M8 MT41J256M4 MT41J64M16JT-12 DDR3 SDRAM MT41J256M4 ?32 Meg x 4 x 8 banks MT41J128M8 ?16 Meg x 8 x 8 banks MT41J64M16 ?8 Meg x 16 x 8 banks
Micron Technology
MT48LC32M16A2P-75ITC SDR SDRAM MT48LC128M4A2 ?32 Meg x 4 x 4 banks MT48LC64M8A2 ?16 Meg x 8 x 4 banks MT48LC32M16A2 ?8 Meg x 16 x 4 banks
Micron Technology
K4S511632M K4S511632M-TC K4S511632M-TL1H K4S511632 512Mbit SDRAM
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
H55S5132EFR H55S5132EFR-75M 512Mbit (16Mx32bit) Mobile SDR Memory
Hynix Semiconductor
HY27US08121M HY27US16121M HY27USXXX HY27SS08121M H 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
HYNIX[Hynix Semiconductor]
H55S5162DFR-60M H55S5162DFR-75M H55S5162DFR-A3M 512MBit MOBILE SDR SDRAMs based on 8M x 4Bank x16I/O
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512Mbit Double Data Rate (DDR2) Component
Infineon Technologies A...
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HYNIX[Hynix Semiconductor]
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