| PART |
Description |
Maker |
| HY62LF16404C |
Super Low Power Slow SRAM - 4Mb
High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
Hynix Semiconductor
|
| KM616FS4110ZI-10 KM616FS4110ZI-7 |
100ns; V(cc): -2 to 3V; 1W; 256K x 16-bit super low power and low voltage full CMOS static RAM
70ns; V(cc): -2 to 3V; 1W; 256K x 16-bit super low power and low voltage full CMOS static RAM
|
Samsung Electronic
|
| K6F4016R4E-EF85 K6F4016R4E-F K6F4016R4E-EF70 K6F40 |
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
256K x 16bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| FMP1617DAX |
1M x 16 bit Super Low Power and Low Voltage Full CMOS RAM
|
FIDELIX
|
| K6F1008V2C K6F1008V2C-F K6F1008V2C-YF55 K6F1008V2C |
128Kx8 bit Super Low Power and Low Voltage CMOS Static RAM 128Kx8位超低功耗和低电压的CMOS静态RAM
|
http://
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| EM640FU8E |
512K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions
|
| DSK6F2008U2E K6F2008U2E-YF55 K6F2008U2E-YF70 |
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Samsung Electronic
|
| HD64338121WW H838122 H838120 |
Renesas 8-Bit Single-Chip Microcomputer Super Low Power Series 瑞萨8位单片机Super Low Power系列
|
Renesas Electronics, Corp.
Renesas Electronics Corporation.
|
| K6F8016R6D K6F8016R6D-F |
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Samsung Electronic
Samsung semiconductor
|
| EM646FV16FU |
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions Inc
|
