| PART |
Description |
Maker |
| 70GRCP32-HL |
RACKS 32 Channel Parallel Controller Board for 72-PMX-32D
|
Grayhill, Inc
|
| AS3833-ZSOT AS3833-ZTQT |
6 channel high-precision LED cont rol ler for 3D-LCD backl ight with integrated step-up cont rol ler
|
ams AG
|
| IRFM150 2N7224 |
N-Channel Power MOSFET(Vdss:100V,Id(cont):34A,Rds(on):0.070惟)(N娌?????MOS?烘?搴??(Vdss:100V,Id(cont):34A,Rds(on):0.070惟))
N-Channel Power MOSFET(Vdss:100V,Id(cont):34A,Rds(on):0.070Ω)(N沟道功率MOS场效应管(Vdss:100V,Id(cont):34A,Rds(on):0.070Ω)) N沟道功率MOSFET（减振钢板基本：100V的，身份证（续）4A条的Rds（on）：0.070Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本00V的，身份证（续）4A条的Rds（on.070Ω））
|
SEMELAB LTD
Electronic Theatre Controls, Inc.
TE Connectivity, Ltd.
Semelab(Magnatec)
SEME-LAB[Seme LAB]
|
| IRFE230 2N6798U |
N-Channel Power MOSFET(Vdss:200V,Id(cont):4.8A,Rds(on):0.46Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):4.8A,Rds(on):0.46Ω)) N沟道功率MOSFET（减振钢板基本：200伏，身份证（续）.8A时，RDS（上）：0.46Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本00伏，身份证（续）.8A时，RDS（对）：0.46Ω））
N-Channel N沟道
|
NXP Semiconductors N.V.
TT electronics Semelab Limited
Seme LAB
|
| IRFN340SMD |
N-Channel Power MOSFET(BVdss:400V,Id(cont):10A,Rds(on):0.55Ω)(N沟道功率MOS场效应管(BVdss:400V,Id(cont):10A,Rds(on):0.55Ω))
|
SemeLAB
SEME-LAB[Seme LAB]
|
| MAX1271ACAI-T MAX12528ETKTD MAX19507 MAX1267AEEG-T |
Multirange, 5V, 8-Channel, Serial 12-Bit ADCs 8-CH 12-BIT SUCCESSIVE APPROXIMATION ADC, SERIAL ACCESS, PDSO28
Dual, 80Msps, 12-Bit, IF/Baseband ADC DUAL 1-CH 12-BIT PROPRIETARY METHOD ADC, PARALLEL ACCESS, QCC68
双通道位130Msps ADC 双通道位130Msps ADC
265ksps, 3V, 6-/2-Channel, 12-Bit ADCs with 2.5V Reference and Parallel Interface 2-CH 12-BIT SUCCESSIVE APPROXIMATION ADC, PARALLEL ACCESS, PDSO24
2x4-Channel, Simultaneous-Sampling, 14-Bit DAS 4-CH 14-BIT SUCCESSIVE APPROXIMATION ADC, PARALLEL ACCESS, UUC
400ksps, 5V, 8-/4-Channel, 12-Bit ADCs with 2.5V Reference and Parallel Interface 8-CH 12-BIT SUCCESSIVE APPROXIMATION ADC, PARALLEL ACCESS, PDSO28
|
Maxim Integrated Products, Inc.
|
| NDH854P |
Length/Height 1.02 mm Width 4.55 mm Depth 4.06 mm Power dissipation 1.8 W Transistor polarity P Channel Current Id cont. 5.1 A Voltage Vgs th max. 4.5 V Voltage Vds max 30 V
P-Channel Enhancement Mode Field Effect Transistor
|
FAIRCHILD[Fairchild Semiconductor]
|
| NDH8436 |
Length/Height 1.02 mm Width 4.55 mm Depth 4.06 mm Power dissipation 1.8 W Transistor polarity N Channel Current Id cont. 5.8 A Voltage Vgs th max. 4.5 V Voltage Vds max 30 V
N-Channel Enhancement Mode Field Effect Transistor
|
FAIRCHILD[Fairchild Semiconductor]
|
| HGTH20N40C1D HGTH20N40E1D HGTH20N50C1D HGTH20N50E1 |
CAP 0.056UF 50V 10% X7R DIP-2 TUBE-PAK S-MIL-PRF-39014/22 20 A, 400 V, N-CHANNEL IGBT, TO-218AC
20A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes
20A/ 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| AD7938BSUZ-6 AD7938BCP-6 |
8-Channel, 625 kSPS, 12-Bit Parallel ADCs with a Sequencer 8-CH 12-BIT SUCCESSIVE APPROXIMATION ADC, PARALLEL ACCESS, PQFP32
8-Channel, 625 kSPS, 12-Bit Parallel ADCs with a Sequencer 8-CH 12-BIT SUCCESSIVE APPROXIMATION ADC, PARALLEL ACCESS, QCC32
|
Analog Devices, Inc.
|
|
