PART |
Description |
Maker |
GBAV152 |
The GBAV152 is designed for ultra high speed switching application SURFACE MOUNT,SWITCHING DIODE
|
E-Tech Electronics LTD GTM CORPORATION
|
GBAV151 |
The GBAV151 is designed for ultra high speed switching application SURFACE MOUNT,SWITCHING DIODE
|
E-Tech Electronics LTD GTM CORPORATION
|
1SS426 |
Switching diode Ultra-High Speed Switching Applications
|
Toshiba Semiconductor
|
KTK5131S |
SMOS FET/ Analog Switch Application N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING, ANALOG SWITCH) N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING ANALOG SWITCH) N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING/ ANALOG SWITCH)
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
|
1SS33707 1SS337 |
Ultra High Speed Switching Application
|
Toshiba Semiconductor
|
1SS187 |
ULTRA HIGH SPEED SWITCHING APPLICATION
|
Guangdong Kexin Industrial Co.,Ltd
|
1SS196 |
ULTRA HIGH SPEED SWITCHING APPLICATION
|
Guangdong Kexin Industrial Co.,Ltd
|
1SS193 |
ULTRA HIGH SPEED SWITCHING APPLICATION
|
Guangdong Kexin Industrial Co.,Ltd
|
1SS190 |
ULTRA HIGH SPEED SWITCHING APPLICATION
|
Guangdong Kexin Industrial Co.,Ltd
|
L1SS184LT1G |
Ultra High Speed Switching Application
|
Leshan Radio Company
|
1SS30807 |
Ultra High Speed Switching Applications
|
Toshiba Semiconductor
|
1SS34407 |
Ultra High Speed Switching Application
|
Toshiba Semiconductor
|