| PART |
Description |
Maker |
| V54C3256164VDUF6I V54C3256404VDUT7I V54C3256164VDU |
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA60
64M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
PROMOS TECHNOLOGIES INC
|
| K4M56163PE-RG K4M56163PE-R K4M56163PE-F90 K4M56163 |
4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 4米16 × 4银行4FBGA移动SDRAM
16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 0.80 MM PITCH, CSP-54
16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 0.80 MM PITCH, LEAD FREE, CSP-54
|
Samsung Semiconductor Co., Ltd.
Omron Electronics, LLC
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| MC-4516CB646EF-A10 MC-4516CB646EF-A80 MC-4516CB646 |
16M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168 DIMM-168
16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
|
NEC, Corp.
NEC Corp.
|
| WEDPN16M64VR-125BC WEDPN16M64VR-100BM WEDPN16M64VR |
125MHz; 3.3V power supply; 16M x 64 registered synchronous DRAM
100MHz; 3.3V power supply; 16M x 64 registered synchronous DRAM
133MHz; 3.3V power supply; 16M x 64 registered synchronous DRAM
|
White Electronic Designs
|
| TCS59SM804BFTL-80 TCS59SM808BFTL-80 TCS59SM808BFT- |
8M×4Banks×8Bits Synchronous DRAM(4M×8位同步动态RAM)
8M×4Banks×8Bits Synchronous DRAM(48M×8位同步动态RAM)
4M×4Banks×16Bits Synchronous DRAM(44M×16位同步动态RAM) 4米4Banks × 16位同步DRAM米16位同步动态RAM）的
16M×4Banks×4Bits Synchronous DRAM(46M×4位同步动态RAM) 1,600 × 4Banks × 4Bits同步DRAM4,600 × 4位同步动态RAM）的
|
Toshiba Corporation
Toshiba, Corp.
|
| MB8516SR72CA-103LDG MB8516SR72CA-102DG MB8516SR72C |
16M x 72Bit Synchronous DRAM DIMM
16M X 72 BIT SYNCHRONOUS DYNAMIC RAM DIMM
|
Fujitsu Component Limited.
Fujitsu Limited
|
| HYE25L128800AC-8 HYB25L128800AC-7.5 |
16M X 8 SYNCHRONOUS DRAM, 6 ns, PBGA54 9 X 8 MM, FBGA-54
16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
|
Infineon Technologies AG
|
| V54C3256164VDLF7PC V54C3256404VDLF7PC V54C3256804V |
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA60 ROHS COMPLIANT, MO-210, FBGA-60
64M X 4 SYNCHRONOUS DRAM, 5.4 ns, PBGA60 ROHS COMPLIANT, MO-210, FBGA-60
32M X 8 SYNCHRONOUS DRAM, 5.4 ns, PBGA60 ROHS COMPLIANT, MO-210, FBGA-60
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
64M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
ProMOS Technologies, Inc.
PROMOS TECHNOLOGIES INC
|
| IS42SM32160C-75BLI IS42SM32160C-75BL-TR IS42SM3216 |
16M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90
512Mb Mobile Synchronous DRAM
|
天津新技术产业园区管理委员会
INTEGRATED SILICON SOLUTION INC
Integrated Silicon Solu...
|
| KM44S16020BT-FH KM44S16020BT-FL |
16M X 4 SYNCHRONOUS DRAM, 6 ns, PDSO54
|
|
| W9825G6JH-6 |
16M X 16 SYNCHRONOUS DRAM, 5 ns, PDSO54
|
WINBOND ELECTRONICS CORP
|
