| PART |
Description |
Maker |
| IRLL024NQ IRLL024NQTRPBF |
3.1 A, 55 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET
HEXFET? Power MOSFET
HEXFET㈢ Power MOSFET
55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
|
International Rectifier
|
| IRFIB7N50A IRFIB7N50APBF |
6.6 A, 500 V, 0.52 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOSFET(Vdss=500V, Rds(on)max=0.52ohm, Id=6.6A)
HEXFET? Power MOSFET
500V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
|
IRF[International Rectifier]
|
| IRFZ44NL IRFZ44NS IRFZ44NSTRR IRFZ44NLPBF IRFZ44NS |
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
HEXFET? Power MOSFET
Power MOSFET(Vdss=55V, Rds(on)=0.0175ohm, Id=49A)
(IRFZ44NL / IRFZ44NS) Power MOSFET
TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 49A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 55V的五（巴西）直| 49A条（丁）|63AB
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRFL4310 IRFL4310TR |
HEXFET? Power MOSFET
1.6 A, 100 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA
Power MOSFET(Vdss=100V, Rds(on)=0.20ohm, Id=1.6A)
100V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
|
IRF[International Rectifier]
|
| AUIRF3710ZSTRL AUIRF3710ZSTRR AUIRF3710Z AUIRF3710 |
HEXFET垄莽 Power MOSFET
HEXFET? Power MOSFET
59 A, 100 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
International Rectifier
|
| AM29LV010B-45RJC AM29LV010B-55JC AM29LV010B-55JE A |
A 20V Single N-Channel HEXFET Power MOSFET in a DirectFET ST Package
100V Single N-Channel HEXFET Power MOSFET in a SO-8 package
80V Single N-Channel HEXFET Power MOSFET in a SO-8 package
-40V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package
20V Dual N-Bidirectional HEXFET Power MOSFET in a 6-Lead FlipFET
30V N-Channel PowerTrench MOSFET 30VN沟道的PowerTrench MOSFET
-12V Single P-Channel HEXFET Power MOSFET in a TSSOP-8 package x8闪存EEPROM
1 Mb (128K x 8) Uniform Sector, Flash Memory 128K X 8 FLASH 3V PROM, 70 ns, PQCC32
x8 Flash EEPROM x8闪存EEPROM
|
Toshiba, Corp.
Advanced Micro Devices, Inc.
Spansion, Inc.
|
| VRF148A VRF148AMP VRF148A10 |
RF MOSFET (VDMOS) for 50V operation; P(out) (W): 30; P(in) (W): 1; Gain (dB): 15; VDD (V): 50; Coss (pF): 35; Case Style: M113 VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
RF POWER VERTICAL MOSFET
|
Microsemi, Corp.
Microsemi Corporation
|
| IXTA10N60P IXTP10N60P IXTI10N60P |
MOSFET N-CH 600V 10A D2-PAK 10 A, 600 V, 0.74 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
PolarHV Power MOSFET
|
Infineon Technologies AG
IXYS CORP
IXYS Corporation
|
| IXFT74N20 IXFR90N20 IXFE24N100 |
HIPERFET POWER MOSFETs 74 A, 200 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268
90 A, 200 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET ISOPLUS247, 3 PIN
Single MOSFET Die 22 A, 1000 V, 0.39 ohm, N-CHANNEL, Si, POWER, MOSFET
|
IXYS, Corp.
|
| IRLU8743PBF IRLR8743PBF |
160 A, 30 V, 0.0031 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
HEXFET㈢Power MOSFET
HEXFET?Power MOSFET
|
International Rectifier
|
| IRF5802 IRF5802TR |
150V Single N-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package
Power MOSFET(Vdss=150V, Id=0.9A)
Power MOSFET(Vdss=150V/ Id=0.9A)
0.9 A, 150 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET
|
IRF[International Rectifier]
|
| NTD110N02R NTD110N02RG NTD110N02RT4 NTD110N02RT4G |
Power MOSFET 12.5 A, 24 V, 0.0062 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOSFET 110 Amps, 24 volts, N-channel, DPAK
|
ONSEMI[ON Semiconductor]
|
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