| PART |
Description |
Maker |
| STE470-75T3MI |
SuperTan Extended (STE) Capacitors, Wet Tantalum Capacitors with Hermetic Seal
|
Vishay Siliconix
|
| FMMV2101TA |
DIODE VAR CAPAC 30V 6.8PF SOT-23 6.8 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
|
Zetex Semiconductor PLC
|
| XCV405E-8BG560C XCV405E-8BG560I XCV405E-8FG560C XC |
Fast, Extended Block RAM, 1.8 V FPGA Family
Extended Memory Field Programmable Gate Arrays
|
XILINX[Xilinx, Inc]
Xilinx, Inc.
|
| GLT4160L04S-50J3 GLT4160L04S-50TC GLT4160L04SE-60T |
60ns; 4M x 4 CMOS dynamic RAM with extended data output
40ns; 4K x 4 CMOS dynamic RAM with extended data output
50ns; 4M x 4 CMOS dynamic RAM with extended data output
|
List of Unclassifed Manufacturers
G-LINK Technology
|
| K4E640812C K4E660812C K4E640812C-JCL-45 K4E660812C |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns
8M x 8bit CMOS dynamic RAM with extended data out, 60ns
8M x 8bit CMOS dynamic RAM with extended data out, 45ns
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| Y1183150K000A0L Y1183150K000A1L Y1183150K000A9L Y1 |
Ultra High Precision Bulk Metal㈢ Z-Foil Extended Value Range Resistor
Ultra High Precision Bulk Metal? Z-Foil Extended Value Range Resistor
Ultra High Precision Bulk Metal垄莽 Z-Foil Extended Value Range Resistor
|
Vishay Siliconix
|
| K4E641612B-L K4E661612B K4E661612B-L K4E661612B-TC |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| PCF84C85A PCF84C85AP PCF84C85AT |
Microcontroller with extended I/O
|
PHILIPS[Philips Semiconductors]
|
| AX61492 |
4U 20-slot Extended Rackmount Chassis
|
Axiomtek Co., Ltd.
|
| FTR-1419 |
40km Extended GBIC Transceiver
|
Finisar Corporation.
|
