| PART |
Description |
Maker |
| RJP4009ANS RJP4009ANS-15 |
Nch IGBT for Strobe Flash
|
Renesas Electronics Corporation
|
| CY25CAH-8F CY25CAH-8F-T13 |
Nch IGBT for Strobe Flash
|
Renesas Electronics Corporation
|
| RJP4003ASA-0-Q0 RJP4003ASA |
Nch IGBT for Strobe Flash
|
Renesas Electronics Corporation
|
| CT40KM-8H05 |
Nch IGBT for Strobe Flasher
|
Renesas Electronics Corporation
|
| CY20AAH-8F |
Nch IGBT for Strobe Flasher
|
Renesas Electronics Corporation
|
| CY20AAJ-8F CY20AAJ-8F-T13 |
Nch IGBT for Strobe Flasher
|
Renesas Electronics Corporation
|
| GT5G133 |
IGBT for strobe flash
|
TOSHIBA
|
| GT5G102 GT5G1022-7B5C |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
5 A, 400 V, N-CHANNEL IGBT
|
Toshiba Semiconductor
|
| GT8G134 |
Silicon N Channel IGBT Strobe Flash Applications
|
Toshiba Semiconductor
|
| CY25BAH-8F CY25BAH-8F-T13 |
D-Subminiature Connector; Gender:Female; Number of Contacts:80; Contact Termination:IDC; Body Material:Steel; Contact Plating:Nickel; Leaded Process Compatible:No; Mounting Type:PC Board; Peak Reflow Compatible (260 C):No
NCH IGBT FOR STROBE FLASHER
Transistors>IGBT>for Stlobe use
|
Renesas Electronics Corporation.
RENESAS[Renesas Electronics Corporation]
|
| GT8G121 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
|
TOSHIBA
|
