PART |
Description |
Maker |
MRFG35010MT1 |
Gallium Arsenide PHEMT RF Power Field Effect Transistor
|
Freescale Semiconductor, Inc
|
MRFG35010R1 |
Gallium Arsenide PHEMT RF Power Field Effect Transistor
|
Freescale Semiconductor, Inc
|
MRFG35003M6T1 MRFG35003M6T106 |
Gallium Arsenide PHEMT RF Power Field Effect Transistor
|
Freescale Semiconductor, Inc
|
MRFG35010 |
Gallium Arsenide PHEMT RF Power Field Effect Transistor
|
Freescale Semiconductor, Inc
|
DGS10-022AS |
Gallium Arsenide Schottky Rectifier 9 A, 220 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-263AB
|
IXYS, Corp.
|
MGR2018CT_D ON1880 MGR2018CT |
Power Manager Gallium Arsenide Power Rectifier From old datasheet system GALLIUM ARSENIDE RECTIFIER 20 AMPERES 180 VOLTS
|
MOTOROLA[Motorola, Inc] ON Semi
|
DGSK32-018CS DGS15-018CS |
Gallium Arsenide Schottky Rectifier Second generation Gallium Arsenide Schottky Rectifier Second generation 24 A, 180 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-252AA
|
IXYS[IXYS Corporation] IXYS, Corp.
|
DGS20-022A DGSK40-025A DGS20-025A DGSK40-022A |
250V gallium arsenide schottky rectifier 220V gallium arsenide schottky rectifier
|
IXYS[IXYS Corporation]
|
WP710A10YD5V |
The Yellow source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Yellow Light Emitting Diode.
|
Kingbright Corporation
|
GN01032N |
Gallium Arsenide Devices
|
Panasonic
|
GN04005 |
Gallium Arsenide Devices
|
Panasonic
|
GN01021 |
Gallium Arsenide Devices
|
Panasonic
|