PART |
Description |
Maker |
MC-4532CD646XF-A10 MC-4532CD646XF-A80 MC-4532CD646 |
32M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168 SOCKET TYPE, DIMM-168 32M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
|
Elpida Memory, Inc.
|
MC-4532CC726XFA-A80 |
32M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
|
Elpida Memory
|
MC-4532CC726XF-A10 MC-4532CC726XF-A80 MC-4532CC726 |
32M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
|
Elpida Memory
|
UPD23C32380GZ-MJH UPD23C32340GZ-MJH UPD23C32340F9- |
32M-BIT MASK-PROGRAMMABLE ROM 4M-WORD BY 8-BIT (BYTE MODE) / 2M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE 32兆位掩膜可编程ROM的分位(字节模式 200万字6位(字模式)页面访问模式 CAP 3PF 16V /-0.1PF THIN-FILM SN90/PB10/NI 30PPM TR-7-PA
|
http:// NEC, Corp. NEC Corp.
|
A29DL323 A29DL323TG-90 A29DL323TV-90 A29DL323UG-90 |
32M-Bit CMOS Low Voltage Dual Operation Flash Memory 4M-Byte by 8-Bit (Byte Mode) / 2M-Word by 16-Bit (Word Mode)
|
AMICC[AMIC Technology]
|
M6MGB331S8BKT M6MGT331S8BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation.
|
M6MGB331S8AKT M6MGT331S8AKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation.
|
MSM27C3252CZ MSM27C32B52CZ |
2097152-Word x 16-Bit or 4194304-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM 2,097,152-Word x 16-Bit or 4,194,304-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM
|
OKI electronic components OKI[OKI electronic componets] OKI SEMICONDUCTOR CO., LTD.
|
MR27V1652D |
1,048,576-Word x 16-Bit or 2,097,152-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM From old datasheet system
|
OKI
|
UPD44321361GF-A75Y UPD44321181GF-A75 UPD44321181GF |
32M-bit(1M-word x 36-bit) ZEROSB(TM) SRAM 32M-bit(2M-word x 18-bit) ZEROSB(TM) SRAM
|
NEC
|