| PART |
Description |
Maker |
| M58PV001LE96ZB5 M58PR001LE M58PR001LE96ZB5 M58PR25 |
256-Mbit, 512-Mbit or 1-Gbit (× 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories
|
STMicroelectronics
|
| S29GL256S |
1-Gbit (128 Mbyte)/512-Mbit (64 Mbyte)/256-Mbit (32 Mbyte)/128-Mbit (16 Mbyte),3.0 V, GL-S Flash Memory
|
Cypress Semiconductor
|
| M36P0R9070E0 |
512 Mbit Flash memory 128 Mbit (Burst) PSRAM
|
Numonyx
|
| TZA3012HW |
30 Mbit/s up to 3.2 Gbit/s A-Rate fiber-optic receiver
|
NXP Semiconductors
|
| SST37VF512_06 SST37VF010 SST37VF010-70-3C-NH SST37 |
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Many-Time Programmable Flash
-bit AVR Microcontroller with 8K Bytes In- System Programmable Flash
|
Silicon Storage Technol...
SST[Silicon Storage Technology, Inc]
Silicon Storage Technology, Inc.
http://
|
| M48T512Y10 M48T512V-70PM1 M48T512Y-70PM1 M48T512V- |
5.0 or 3.3 V, 4 Mbit (512 Kbit x 8) TIMEKEEPER庐 SRAM
5.0 or 3.3 V, 4 Mbit (512 Kbit x 8) TIMEKEEPER? SRAM
|
STMicroelectronics
|
| TZA3015HW/N1 |
TZA3015HW; 30 Mbit/s to 3.2 Gbit/s A-rate(tm) 4-bit fibre optic transceiver
|
Philips
|
| M39P0R9080E0ZAD M39P0R9080E0ZADE M39P0R9080E0ZADF |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 256 Mbit Low Power SDRAM, 1.8V Supply, Multi-Chip Package
|
Numonyx B.V
|
| M29W800FB9D11 M29W800FB-KGD |
Known good die, 8-Mbit (1 Mbit x 8 or 512 Kbits x 16), boot block, 3 V supply Flash memory
|
Numonyx B.V
http://
|
| NAND02GW3B2BN1E NAND02GW3B2BN1F NAND02GW3B2BN6E NA |
1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
|
Numonyx B.V
|
| NAND01G-B |
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
|
STMicroelectronics
|
