| PART |
Description |
Maker |
| CHA6664-QDG |
12-16GHz 1W High Power Amplifier
|
United Monolithic Semiconductors
|
| FMA3011 |
12.7-16GHZ MMIC POWER AMPLIFIER
|
Filtronic Compound Semiconductors
|
| 2SC5347AF-TD-E 2SC5347AE-TD-E |
High-Frequency Semi-Power Output Stage, Low-Noise Medium Output Amplifi er Applications
|
Sanyo Semicon Device
|
| MCH3007 |
High-Frequency Low-Noise Amplifi er
|
Sanyo Semicon Device
|
| ENA1090A 2SC5374A12 |
VHF to UHF Band OSC, High-Frequency Amplifi er Applications
|
Sanyo Semicon Device
|
| MGA-23003 MGA-23003-BLKG |
3.3-3.8 GHz WiMAX Power Amplifi er (3x3mm)
|
AVAGO TECHNOLOGIES LIMITED
|
| 15GN03CA12 15GN03CA-TB-E ENA1106A |
NPN Epitaxial Planar Silicon Transistor VHF High-frequency Amplifi er Applications
|
Sanyo Semicon Device
|
| PTMA180402M11 |
Wideband RF LDMOS Integrated Power Amplifi er 40 W, 28 V, 1800 . 2100 MHz
|
Infineon Technologies AG
|
| ENA1076A 2SC4853A12 |
Low-Voltage, Low-Current High-Frequency Amplifi er Applications
|
Sanyo Semicon Device
|
| CHT4660-QAG |
DC-16GHz Attenuator
|
United Monolithic Semiconductors
|
