PART |
Description |
Maker |
MMG3002NT112 |
Heterojunction Bipolar Transistor
|
Freescale Semiconductor, Inc
|
MMG3003NT112 |
Heterojunction Bipolar Transistor Technology
|
Freescale Semiconductor, Inc
|
MMG3009NT108 |
Heterojunction Bipolar Transistor (InGaP HBT)
|
Freescale Semiconductor, Inc
|
MMG3010NT1 |
Heterojunction Bipolar Transistor (InGaP HBT)
|
FREESCALE[Freescale Semiconductor, Inc]
|
MMG3009NT1 |
Heterojunction Bipolar Transistor (InGaP HBT)
|
FREESCALE[Freescale Semiconductor, Inc]
|
MT3S113P |
Radio-frequency SiGe Heterojunction Bipolar Transistor
|
Toshiba, Corp.
|
MT3S111P |
Radio-frequency SiGe Heterojunction Bipolar Transistor
|
TOSHIBA
|
MMG3005NT1 |
Heterojunction Bipolar Transistor Technology (InGaP HBT)
|
FREESCALE[Freescale Semiconductor, Inc]
|
MMG3013NT1 |
Heterojunction Bipolar Transistor Technology (InGaP HBT)
|
FREESCALE[Freescale Semiconductor, Inc]
|
MMG3015NT1 |
Heterojunction Bipolar Transistor Technology (InGaP HBT)
|
Freescale Semiconductor, Inc
|
LL1608-FH1N2S RC0402JR-07430RL GRM1555C1H101JA01 G |
Heterojunction Bipolar Transistor Technology (InGaP HBT)
|
Freescale Semiconductor, Inc
|
MMG3H21NT1 |
Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier
|
Freescale Semiconductor, Inc
|