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AK5322048W - 2,097,152 Word by 32 Bit CMOS Dynamic Random Access Memory

AK5322048W_4210658.PDF Datasheet


 Full text search : 2,097,152 Word by 32 Bit CMOS Dynamic Random Access Memory
 Product Description search : 2,097,152 Word by 32 Bit CMOS Dynamic Random Access Memory


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2097152-BIT (131072-WORD BY 16-BIT) CMOS STATIC RAM
MITSUBISHI[Mitsubishi Electric Semiconductor]
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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M6MGT331S8BKT M6MGB331S8BKT 33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
Renesas Electronics Corporation
M6MGB331S8BKT M6MGT331S8BKT 33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
Renesas Electronics Corporation.
M5M4V64S30ATP-10L M5M4V64S30ATP-8A M5M4V64S30ATP-8 From old datasheet system
64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM
MITSUBISHI[Mitsubishi Electric Semiconductor]
M6MGD137W34DWG 134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS MOBILE RAM
Renesas Electronics Corporation
MR27V1652E MR27V1652EMA MR27V1652ERA MR27V1652ETN 1,048,576 - Word x 16-Bit or 2,097-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM
OKI electronic componets
HN62408 HN62408FP HN62408P 524288-WORD X 16-BIT/1048576-WORD X 8-BIT CMOS MASK PROGRAMMABLE ROM 524288字16-BIT/1048576-WORD × 8位CMOS掩膜可编程ROM
Hitachi,Ltd.
Hitachi Semiconductor
HM51W17805B HM51W17805BJ-8 HM51W17805BLJ-8 HM51W17 Plastic internal molding, Noise prevention, Small and lightweight interface; HRS No: 112-3355-0 71; Contact Mating Area Plating: Tin
2097152-word*8-bit Dynamic random access memory
Hitachi,Ltd.
 
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