
	Part Number	Hot Search : 2SK3192 1182R 2SK34 2SC34 SMV1409 BA6222 MPS2369 K500FEMA
	Product Description
	Full Text Search

M52S16161A-10BG - 512K x 16Bit x 2Banks Synchronous DRAM

M52S16161A-10BG_4186482.PDF Datasheet


Part No.	M52S16161A-10BG M52S16161A-10TG
Description	512K x 16Bit x 2Banks Synchronous DRAM
File Size	752.86K / 29 Page
Maker	Elite Semiconductor Memory Technology Inc.
Homepage	http://www.esmt.com.tw/index.asp
Download	[ M52S16161A-10BG M52S16161A-10TG Datasheet PDF Downlaod from IC-ON-LINE.CN ] [ M52S16161A-10BG M52S16161A-10TG Datasheet PDF Downlaod from Datasheet.HK ] [M52S16161A-10BG M52S16161A-10TG Datasheet PDF Downlaod from Maxim4U.com ] :-) [ View it Online ] [ Search more for M52S16161A-10BG ] [ Price & Availability of M52S16161A-10BG by FindChips.com ]

Full text search : 512K x 16Bit x 2Banks Synchronous DRAM

Related Part Number

PART	Description	Maker
M12L16161A-5TG2Q M12L16161A-7TG2Q M12L16161A2Q	512K x 16Bit x 2Banks	Elite Semiconductor Memory Technology Inc.
M12L16161A-5TG M12L16161A-7BG M12L16161A-7TG M12L1	512K x 16Bit x 2Banks Synchronous DRAM	Elite Semiconductor Memory Technology Inc.
M52D16161A-10BG M52D16161A-10TG M52D16161A	512K x 16Bit x 2Banks Synchronous DRAM	Elite Semiconductor Memory Technology Inc.
M12S16161A-10T M12S16161A-10TG	512K x 16Bit x 2Banks Synchronous DRAM	Elite Semiconductor Memory Technology Inc.
T431616D T431616D-5C T431616D-5CG T431616D-5S T431	1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM	Taiwan Memory Technology
M52S16161A-10TG M52S16161A-8BG	512K x 16Bit x 2Banks Synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 9 ns, PDSO50 512K x 16Bit x 2Banks Synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA60	Elite Semiconductor Memory Technology, Inc.
A43L0616AV-5.5	5.5ns; 183MHz/CL=3; 143MHz/CL=2; 512K x 16bit x 2banks synchronous DRAM	AMIC Technology
A43L8316AV-5 A43L8316AV-5.5 A43L8316AV-6 A43L8316A	Cycle time:5ns; 200MHz CL=3 access time:4.5ns 128K x 16bit x 2banks synchronous DRAM Cycle time:5.5ns; 183MHz CL=3 access time:5.0ns 128K x 16bit x 2banks synchronous DRAM Cycle time:6ns; 166MHz CL=3 access time:5.5ns 128K x 16bit x 2banks synchronous DRAM Cycle time:7ns; 143MHz CL=3 access time:6.0ns 128K x 16bit x 2banks synchronous DRAM	AMIC Technology
M52S32162A-10BIG M52S32162A-10TIG M52S32162A-7.5BI	1M x 16Bit x 2Banks Synchronous DRAM	Elite Semiconductor Memory Technology Inc.
M52D32162A-10BG M52D32162A-10TG M52D32162A-7.5BG M	1M x 16Bit x 2Banks Synchronous DRAM	Elite Semiconductor Memory Technology Inc.
K4S161622E-TC/I/E	512K x 16Bit x 2 Banks Synchronous DRAM Data Sheet	Samsung Electronic
N08L1618C2AB2 N08L1618C2A N08L1618C2AB	8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16bit 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K 】 16bit	NANOAMP[NanoAmp Solutions, Inc.]

Related keyword From Full Text Search System

M52S16161A-10BG usb-hs otg	M52S16161A-10BG integrated gigabit	M52S16161A-10BG PDF	M52S16161A-10BG text	M52S16161A-10BG inductors
M52S16161A-10BG semicon	M52S16161A-10BG filetype:pdf	M52S16161A-10BG Power	M52S16161A-10BG amplifier	M52S16161A-10BG Sipat

Price & Availability of M52S16161A-10BG

All Rights Reserved © IC-ON-LINE 2003 - 2022

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]

Mirror Sites : [www.datasheet.hk] [www.maxim4u.com] [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com] [www.gdcy.net]

. . . . .

We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy.

X

0.30327701568604