| PART |
Description |
Maker |
| 2SB1035 |
900mW Lead frame PNP transistor, maximum rating: -25V Vceo, -1A Ic, 55 to 300 hFE. Complementary 2SD1447
SMALL-SIGNAL TRANSISTOR FOR LOW FREQUENCY POWER AMPLIFY APPLICATION
|
Isahaya Electronics Corporation
|
| 2SC3580 |
900mW Lead frame NPN transistor, maximum rating: 20V Vceo, 700mA Ic, 150 to 800 hFE. Complementary 2SA1398
SMALL-SIGNAL TRANSISTOR
|
Isahaya Electronics Corporation
|
| 2SC3244 |
900mW Lead frame NPN transistor, maximum rating: 100V Vceo, 500mA Ic, 55 to 300 hFE. Complementary 2SA1284
FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| 2SK2880 |
450mW Lead Frame J-FET (Field-Effect Transistor), maximum rating: -50V Vgdo, 10mA Ig, 0.3 to 12 mA Idss.
FOR LOW FREQUENCY AMPLIFY APPLICATION N CHANNEL JUNCTION TYPE MICRO(FRAME TYPE)
|
Isahaya Electronics Corporation
|
| 2SC2335-15 |
SILICON POWER TRANSISTO
|
Renesas Electronics Corporation
|
| BFP540FESD |
NPN Silicon RF Transisto NPN硅射频Transisto
|
INFINEON[Infineon Technologies AG]
|
| RPM7237-H8R RPM7237-H9R |
Lead Frame Remote Control Receiver Modules (3V Type)
|
ROHM
|
| RPM7137-H4R RPM7137-H9R RPM7137-V4R |
Lead Frame Remote Control Receiver Modules (5V Type)
|
ROHM
|
| B5B-435-TL |
B5B-435-TL is a AlGaInP LED mounted on a lead frame with a clear epoxy lens
|
Roithner LaserTechnik G...
|
| B5B-433-B505 |
B5B-433-B505 is a InGaN LED mounted on a lead frame with a clear epoxy lens
|
Roithner LaserTechnik G...
|
| 2SB1198L-X-AE3-R 2SB1198G-X-AE3-R 2SB1198L-Q-AE3-R |
LOW FREQUENCY PNP TRANSISTOR
500 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR LEAD FREE PACKAGE-3
|
http://
Unisonic Technologies Co., Ltd.
|
| 2SD1972 |
2W Lead frame NPN transistor, maximum rating: 60V Vceo, 3A Ic, 250 to 800 hFE.
For Low Frequency Power Amplify Application Silicon NPN Epitaxial Planar type
|
ISAHAYA[Isahaya Electronics Corporation]
N.A.
|
