| PART |
Description |
Maker |
| BF1005SR BF1005SW BF1005S |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gp=19dB, F=1.4dB
Silicon N-Channel MOSFET Tetrode 硅N沟道MOSFET四极
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| KI4511DY |
TrenchFET Power MOSFET Drain-Source Voltage Vds 20V
|
TY Semiconductor Co., Ltd
|
| BF2030R |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=31mS, Gp=23dB, F=1.5dB
|
Infineon
|
| FDN5630 |
N-Channel Power Trench MOSFET
VDS (V) = 60V RDS(ON)100 m (VGS = 10V) Optimized for use in high frequency DC/DC converters
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| U4935B-ADP U4935B |
MOSFET, N, TO-3PML; Transistor type:MOSFET; Current, Id cont:2A; Resistance, Rds on:10R; Case style:TO-3PML; Current, Idm pulse:4A; Power, Pd:50W; Transistor polarity:N; Voltage, Vds max:1500V RoHS Compliant: Yes
SECAM Decoder
|
TEMIC[TEMIC Semiconductors]
|
| AMS431 AMS431A AMS431AL AMS431AM AMS431AN AMS431AS |
PRECISION ADJUSTABLE SHUNT REGULATOR 精密可调并联稳压
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:15A; On-Resistance, Rds(on):0.09ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-252; Leaded Process Compatible:No 精密可调并联稳压
MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-60V; Continuous Drain Current, Id:10A; On-Resistance, Rds(on):0.28ohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:TO-252; Leaded Process Compatible:No 精密可调并联稳压
|
Advanced Monolithic Systems, Inc.
ADMOS[Advanced Monolithic Systems]
|
| ST24W01 ST24W01B1TR ST24W01B3TR ST24W01B5TR ST24W0 |
128 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
Cyclone FPGA 6K PQFP-240 I2C串行EEPROM
MOSFET, N POWERPAKMOSFET, N POWERPAK; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:30V; Case style:PowerPak SO-8; Current, Id cont:6.5A; Current, Idm pulse:40A; Power, Pd:1.5W; Resistance, Rds on:0.015R; SMD:1; 1000串行EEPROM128 × 8
MOSFET, N SO-8MOSFET, N SO-8; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:30V; Case style:PowerPak SO-8; Current, Id cont:11A; Current, Idm pulse:40A; Power, Pd:1.9W; Resistance, Rds on:15R; SMD:1; Charge, gate 000串行EEPROM28 × 8
IC FLEX 10K AKA FPGA I2C串行EEPROM
SERIAL 1K 128 x 8 EEPROM 000串行EEPROM28 × 8
Stratix GX FPGA 10K 4-FBGA
IC FLEX 10KA FPGA
IC FLEX 6000 FPGA 24K 208-PQFP
IC APEX 20KE FPGA 200K
IC FLEX 10KB FPGA 100K
IC APEX 20KE FPGA 400K
(ST2xxx) SERIAL 1K 128 x 8 EEPROM
From old datasheet system
SERIAL 1K (128 x 8) EEPROM
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
ST Microelectronics
|
| SP8830 SP8830ADG SP8830BDG DES9157201 DES9157201AC |
1.5GHz ÷ 10 Prescaler
1.5GHz 10 Prescaler
1.5GHz ± 10 Prescaler
MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:13A; On-Resistance, Rds(on):15mohm; Rds(on) Test
|
Mitel Semiconductor
MITEL[Mitel Networks Corporation]
|
| AMS5010KT AMS5010JT AMS5010NT AMS5010LN AMS5010HN |
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:40V; Continuous Drain Current, Id:40A; On-Resistance, Rds(on):0.014ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-252; Leaded Process Compatible:No 1.2V的电压基
1.2V VOLTAGE REFERENCE 1.2V的电压基
|
Advanced Monolithic Systems, Inc.
ADMOS[Advanced Monolithic Systems]
|
| KI1555DL |
PIN Configuration Drain-Source Voltage Vds 20V
|
TY Semiconductor Co., L...
|
| KXU03N25 |
VDS (V) = 250V RDS(ON) 2 (VGS = 10V) Drain-Source Voltage VDSS 250 V
|
TY Semiconductor Co., Ltd
|
