PART |
Description |
Maker |
RFP-10N50TV |
Aluminum Nitride Terminations
|
Anaren Microwave
|
RFP-20N50TPC |
Aluminum Nitride Terminations
|
Anaren Microwave
|
RFP-100N50TW |
Aluminum Nitride Terminations
|
Anaren Microwave
|
RFP-100200N4Z50-2 |
Aluminum Nitride Terminations 10 Watts, 50ohm
|
Anaren Microwave
|
W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
NPTB00004 |
Gallium Nitride 28V, 5W RF Power Transistor
|
M/A-COM Technology Solutions, Inc. M/A-COM Technology Solution...
|
NPTB00004A NPTB00004A-15 |
Gallium Nitride 28V, 5W, DC-6 GHz HEMT
|
M/A-COM Technology Solutions, Inc. M/A-COM Technology Solu...
|
NPT1004 NPT1004-15 |
Gallium Nitride 28V, 45W RF Power Transistor
|
M/A-COM Technology Solutions, Inc. M/A-COM Technology Solu...
|
NPA1003 NPA1003-15 |
Gallium Nitride 28V, 5W, 20-1500 MHz MMIC Amplifier
|
M/A-COM Technology Solution... M/A-COM Technology Solu...
|
RFP-100200-4X50-2 |
Chip Terminations
|
Anaren Microwave
|
MFE211 MFE212 |
N-CHANNEL DUAL-GATE SILICON-NITRIDE PASSIVATED MOS FIELD-EFFECT TRANSISTORS N沟道双栅氮化硅钝化马鞍山场效应晶体管 From old datasheet system
|
Motorola Mobility Holdings, Inc. Motorola, Inc.
|
A5BXXXX1A |
Chip Terminations 5 Watts
|
Anaren Microwave
|
|