| PART |
Description |
Maker |
| P3C1041-10TI P3C1041-10TC P3C1041-10JC P3C1041-10J |
HIGH SPEED 256K x 16 (4 MEG) STATIC CMOS RAM 256K X 16 STANDARD SRAM, 10 ns, PDSO44
HIGH SPEED 256K x 16 (4 MEG) STATIC CMOS RAM 256K X 16 STANDARD SRAM, 12 ns, PDSO44
|
Pyramid Semiconductor, Corp.
|
| P4C1041-10JC P4C1041-10TC P4C1041-15JC |
HIGH SPEED 256K x 16 (4 MEG) STATIC CMOS RAM 256K X 16 STANDARD SRAM, 10 ns, PDSO44
HIGH SPEED 256K x 16 (4 MEG) STATIC CMOS RAM 256K X 16 STANDARD SRAM, 15 ns, PDSO44
|
Pyramid Semiconductor, Corp.
|
| P3C1041-10JC P3C1041-10JI P3C1041-10TC P3C1041-10T |
HIGH SPEED 256K x 16 (4 MEG) STATIC CMOS RAM
|
Pyramid Semiconductor Corporation
|
| 71V416S15PHG IDT71V416L IDT71V416S |
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit)
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) Single 3.3V power supply
|
Integrated Device Technology
|
| AT27BV020-90VI AT27BV020-90VC AT27BV020-90TI AT27B |
High Speed CMOS Logic Octal D-Type Flip-Flops with Data Enable 20-SOIC -55 to 125 256K X 8 OTPROM, 90 ns, PDSO32
High Speed CMOS Logic Octal D-Type Flip-Flops with Data Enable 20-PDIP -55 to 125 256K X 8 OTPROM, 90 ns, PQCC32
High Speed CMOS Logic Octal Positive-Edge-Triggered D-Type Flip-Flops with 3-State Outputs 20-SOIC -55 to 125 256K X 8 OTPROM, 90 ns, PBGA42
High Speed CMOS Logic Octal Positive-Edge-Triggered D-Type Flip-Flops with 3-State Outputs 20-SOIC -55 to 125 256K X 8 OTPROM, 150 ns, PDSO32
2-Megabit 256K x 8 Unregulated Battery-Voltage High Speed OTP EPROM
|
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| V53C8256H35 |
ULTRA-HIGH SPEED, 256K X 8 FAST PAGE MODE CMOS DYNAMIC RAM 超高速，256K × 8快速页面模式的CMOS动态随机存储器
|
Mosel Vitelic, Corp.
|
| IDT70V7319S IDT70V7319S133DD |
HIGH-SPEED 3.3V 256K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 高速与3.3V 3.3V56 × 18 SYNCHRONOU开户银行可切换双端口静态RAM.5V的接
HIGH-SPEED 3.3V 256K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 256K X 18 DUAL-PORT SRAM, 15 ns, PQFP144
|
Integrated Device Technology, Inc.
|
| CXK77B1841GB |
4Mb Late Write LVTTL High Speed Synchronous SRAM (256K x 18Bit)(4M位、写延迟LVTTL高速同步静态RAM (256K x 18) 4Mb的后写入LVTTL高速同步SRAM56 × 18位）分位，写延迟LVTTL高速同步静态随机存储器56 × 18位）
|
Sony, Corp.
|
| IS61LV2568L-8T IS61LV2568L-8K IS61LV2568L-10T |
256K x 8 HIGH-SPEED CMOS STATIC RAM 256K X 8 STANDARD SRAM, 8 ns, PDSO44
256K x 8 HIGH-SPEED CMOS STATIC RAM 256K X 8 STANDARD SRAM, 10 ns, PDSO44
|
Integrated Silicon Solution, Inc.
|
| MT41J64M16JT MT41J128M8 MT41J256M4 MT41J64M16JT-12 |
DDR3 SDRAM MT41J256M4 ?32 Meg x 4 x 8 banks MT41J128M8 ?16 Meg x 8 x 8 banks MT41J64M16 ?8 Meg x 16 x 8 banks
|
Micron Technology
|
| HM6207H |
256K High Speed SRAM
|
Hitachi
|
| IC61LV2568 IC61LV2568-8TI IC61LV2568-10K IC61LV256 |
ASYNCHRONOUS STATIC RAM, High Speed A.SRAM
256K x 8 Hight Speed SRAM with 3.3V
|
ICSI[Integrated Circuit Solution Inc]
|
