| PART |
Description |
Maker |
| AS3990 |
UHF RFID single chip reader EPC Class1 Gen2 compatible
|
austriamicrosystems AG
|
| C4123 C5334 C4124 C4133 C4323 C4134 C4324 C3323 C1 |
MEMS digital output motion sensor ultra low-power high performance 3-axes "nano" accelerometer
18-STAGE STATIC SHIFT REGISTER
MEMS digital output motion sensor ultra low-power high performance 3-axes nano accelerometer
MEMS inertial sensor 3-axis ultracompact linear accelerometer
MEMS inertial sensor: 3-axis - ± 2g/± 6g digital output low voltage linear accelerometer
LOW DROP POWER SCHOTTKY RECTIFIER
13.56 MHz short-range contactless memory chip with 4096-bit EEPROM, anticollision and anti-clone functions
Memory tag IC at 13.56 MHz, with 64-bit unique ID and WORM user area, ISO 15693 and ISO 18000-3 Mode 1 compliant
13.56 MHz short-range contactless memory chip with 4096-bit EEPROM and anticollision functions
13.56 MHz short-range contactless memory chip with 512-bit EEPROM and anticollision functions
Turbo 2 ultrafast high voltage rectifier
5V, 16Kbit (2Kb x 8) ZEROPOWER SRAM
Dual decade counter
3.3V, 256Kbit (32Kbit x 8) ZEROPOWER® SRAM
Analog multiplexer/demultiplexer with address latch : single 8 channel
5.0V or 3.3V, 1 Mbit (128 Kbit x 8) ZEROPOWER® SRAM
TURBO2 ULTRAFAST HIGH VOLTAGE RECTIFIER
Quad bilateral switch
5V or 3.3V, 16 Mbit (2Mb x 8) ZEROPOWER® SRAM
Dual J-K flip flop with preset and clear
4-bit magnitude comparator
2048-bit EEPROM tag IC at 13.56 MHz, with 64-bit UID and Password, ISO15693 and ISO18000-3 Mode 1 compliant
MEMS inertial sensor: 3-axis - /-2g/6g ultracompact linear accelerometer 光电
432-bit UHF, EPCglobal Class1 Generation2 and ISO 18000-6C, contactless memory chip with user memory 光电
|
NXP Semiconductors N.V.
STMicroelectronics N.V.
|
| M6MGB331S8AKT M6MGT331S8AKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation.
|
| M6MGT331S8BKT M6MGB331S8BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation
|
| MH32S72PHB-6 |
2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MH32S72AVJA-6 |
2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
|
Mitsubishi Electric Corporation
|
| MH32S72BBFA-6 |
2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MH32S72BBFA-8 MH32S72BBFA-7 |
2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
|
Mitsubishi Electric Corporation
|
| MH32D64KQH-75 |
2 /147 /483 /648-BIT (33 /554 /432-WORD BY 64-BIT) Double Data Rate Synchronous DRAM Module
|
Mitsubishi
|
| MH32S72DBFA-8 |
2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM 2415919104位（33554432 - Word2位）同步动态随机存储器
|
Mitsubishi Electric, Corp.
|
| MPR6000 |
Multi-Protocol RFID Reader Module EPC Class 0/0 Class1 and Gen2
|
WJ Communication
|
| MPR5000_06 MPR5000 |
Multi-Protocol RFID Reader Module EPC Class 0/0 Class1 and Gen2 with Integral Antenna
|
WJCI[WJ Communication. Inc.]
|
|
