| PART |
Description |
Maker |
| RA03M3540MD RA03M3540MD-101 |
RF MOSFET MODULE 350-400MHz 38dBm 7.2V, 2 Stage Amp. For PORTABLE RADIO
|
http://
Mitsubishi Electric Semiconductor
|
| RA03M3540MD RA03M3540MD10 RA03M3540MD-101 |
RoHS Compliance , 350-400MHz 38dBm 7.2V, 2 Stage Amp. For PORTABLE RADIO
350 MHz - 400 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
|
Mitsubishi Electric Semiconductor
|
| M57721M 57721M |
400-450MHz 12.5V /7W /FM PORTABLE RADIO
400-450MHz 12.5V,7W,FM PORTABLE RADIO
350-400MHZ, 12.5V, 7W, FM MOBILE RADIO
From old datasheet system
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| LPQ352-CEF LPQ352-CF |
4-OUTPUT 350 W AC-DC PWR FACTOR CORR MODULE
|
ITT, Corp.
|
| HA-2540 HA-254003 |
400MHz, Fast Settling Operational Amplifier
400MHz, Fast Settling Operational
Amplifier(400MHz、快速稳定运算放大器)
|
Intersil Corporation
|
| CPC3730CTR |
0.14 A, 350 V, 30 ohm, N-CHANNEL, Si, POWER, MOSFET ROHS COMPLIANT PACKAGE-3
|
Clare, Inc.
|
| MGB19N35CL MGP19N35CL |
Ignition IGBT 19 Amps, 350 Volts(19A50V钳位电压，点火绝缘栅双极型晶体管（D2PAK封装 点火IGBT一十九安培50伏特，（9A50V钳位电压，点火绝缘栅双极型晶体管（采用D2PAK封装））
Ignition IGBT 19 Amps, 350 Volts(19A350V钳位电压，点火绝缘栅双极型晶体管（TO-220封装 19 A, 380 V, N-CHANNEL IGBT, TO-220AB
Ignition IGBT 19 Amps, 350 Volts(19A锛?50V?充??靛?锛?????缂????????浣??锛?O-220灏??锛?
|
ON Semiconductor
|
|
