| PART |
Description |
Maker |
| M58PV001LE96ZB5 M58PR001LE M58PR001LE96ZB5 M58PR25 |
256-Mbit, 512-Mbit or 1-Gbit (× 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories
|
STMicroelectronics
|
| CY14V104LA |
4-Mbit (512 K x 8 / 256 K x 16) nvSRAM
|
Cypress Semiconductor
|
| CY14B104NA-BA25IT |
4-Mbit (512 K x 8/256 K x 16) nvSRAM
|
Cypress Semiconductor
|
| CY7C1362C-166AJXC CY7C1360C-166AJXC CY7C1360C-166A |
9-Mbit (256 K × 36/512 K × 18) Pipelined SRAM
|
Cypress Semiconductor
|
| SST27SF020-70-3C-PH |
256 Kbit / 512 Kbit / 1 Mbit / 2 Mbit (x8) Many-Time Programmable Flash
|
SST
|
| M29W400DT07 M29W400DB55M1 M29W400DB55M1E M29W400DB |
4 Mbit (512 Kb x 8 or 256 Kb x 16, boot block) 3 V supply Flash memory
|
STMicroelectronics
|
| M29W400DB55N1 M29W400DB55N1E M29W400DB55N1F M29W40 |
4 Mbit (512 Kb x 8 or 256 Kb x 16, boot block) 3 V supply Flash memory
|
STMicroelectronics
|
| S29GL256S |
1-Gbit (128 Mbyte)/512-Mbit (64 Mbyte)/256-Mbit (32 Mbyte)/128-Mbit (16 Mbyte),3.0 V, GL-S Flash Memory
|
Cypress Semiconductor
|
| CY7C420-25PC CY7C420-40PC CY7C420-65PC CY7C421 CY7 |
256/512/1K/2K/4K x 9 Asynchronous FIFO 2K X 9 OTHER FIFO, 40 ns, PDIP28
256/512/1K/2K/4K x 9 Asynchronous FIFO 4K X 9 OTHER FIFO, 40 ns, PQCC32
256/512/1K/2K/4K x 9 Asynchronous FIFO 256 X 9 OTHER FIFO, 40 ns, PQFP32
256/512/1K/2K/4K x 9 Asynchronous FIFO 2K X 9 OTHER FIFO, 40 ns, PQFP32
256/512/1K/2K/4K x 9 Asynchronous FIFO 2K X 9 OTHER FIFO, 20 ns, CDIP28
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
|
| AM41PDS3224D |
32 Mbit (2 M x 16-Bit) CMOS 1.8 Volt-only. Simultaneous Operation Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM (Preliminary) 32兆位米16位）的CMOS电压1.8只。同时采取行动，页面模式闪存兆位12x 8-Bit/256x 16位），静态存储器（初步）
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
|
Advanced Micro Devices
|
| IDT7202 IDT7200L12J IDT7200L12J8 IDT7200L12SO IDT7 |
1K x 9 AsyncFIFO, 5.0V
512 x 9 AsyncFIFO, 5.0V
256 x 9 AsyncFIFO, 5.0V
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9 and 1,024 x 9
|
IDT
|
