| PART |
Description |
Maker |
| PE15A1008 |
23 dBm IP3, 1.6 dB NF, 13 dBm, 20 MHz to 3 GHz, Low Noise Amplifier
|
Pasternack Enterprises, Inc.
|
| BGA318 Q62702-G0043 |
From old datasheet system
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) 硅双极单片放大器（级0瓦，增益模块十六分贝典型增益.0 GHz2 dBm典型的P - 1dB的在1.0千兆赫）
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) 0 MHz - 1200 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| PE71S2016 |
SMA SPST PIN Diode Switch Operating From 2 GHz to 26.5 GHz Up To 30 dBm
|
Pasternack Enterprises,...
|
| PE71S2017 |
SMA SPDT PIN Diode Switch Operating From 2 GHz to 26.5 GHz Up To 30 dBm
|
Pasternack Enterprises,...
|
| PE15A1004 |
3 dB NF, 13 dBm, 12 GHz to 18 GHz, Low Noise Amplifier
|
Pasternack Enterprises, Inc.
|
| TIM1414-7-252 |
HIGH POWER P1dB=38.0 dBm at 13.75 GHz to 14.5 GHz
|
Toshiba Semiconductor
|
| TA005-025-25-20 |
0.5 - 2.5 GHz 20 dBm Amplifier
|
Transcom, Inc.
|
| TA008-055-20-24 |
0.8 - 5.5 GHz 25 dBm Amplifier
|
Transcom, Inc.
|
| TM020-080-12-20 |
2 ~ 8 GHz 20 dBm Module
|
Transcom, Inc.
|
| TA010-020-15-15 |
1.0 - 2.0 GHz 15 dBm Amplifier
|
Transcom, Inc.
|
| TM059-070-10-36 |
5.9 - 7.0 GHz 36 dBm Power Module
|
Transcom, Inc.
|
| TA160-180-50-10 |
16 - 18 GHz 10 dBm Power Amplifier
|
Transcom, Inc.
|
