| PART |
Description |
Maker |
| ISL89400ABZ-T |
100V, 1.25A Peak, High Frequency Half-Bridge Drivers; Temperature Range: Full-Range Ind; Package: 8-SOIC T&R 1.25 A HALF BRDG BASED MOSFET DRIVER, PDSO8
|
Intersil, Corp.
|
| ISL2110 ISL2110ABZ ISL2110AR4Z ISL2111 ISL2111ABZ |
100V, 3A/4A Peak, High Frequency Half-Bridge Drivers
|
Intersil Corporation
|
| HIP2100 |
Driver, Half Bridge, 100V/2A Peak, High Frequency, Drives N-Channel
|
Intersil
|
| HIP2121FRTAZ HIP2121FRTBZ HIP2120 HIP2120FRTAZ HIP |
100V, 2A Peak, High Frequency Half-Bridge Drivers with Adjustable Dead Time Control and PWM Input
|
Intersil Corporation
|
| 25FR120 25FR120M A25FR120 A25FR120M 25FR100 25FR10 |
100V 25A Std. Recovery Diode in a DO-203AA (DO-4)package
From old datasheet system
800V 25A Std. Recovery Diode in a DO-203AA (DO-4)package
STANDARDRECOVERYDIODES
400V 25A Std. Recovery Diode in a DO-203AA (DO-4)package
600V 25A Std. Recovery Diode in a DO-203AA (DO-4)package
1000V 25A Std. Recovery Diode in a DO-203AA (DO-4)package
1200V 25A Std. Recovery Diode in a DO-203AA (DO-4)package
标准恢复二极
STANDARD RECOVERY DIODES
|
IRF[International Rectifier]
InternationalRectifier
|
| NTE5327 NTE5326 NTE5328 |
Silicon bridge rectifier, single - phase, 25A. Maximum recurrent peak reverse voltage, Prv = 800V.
Silicon bridge rectifier, single - phase, 25A. Maximum recurrent peak reverse voltage, Prv = 600V.
Silicon bridge rectifier, single - phase, 25A. Maximum recurrent peak reverse voltage, Prv = 1000V.
|
NTE Electronics
|
| STD25NF10 STD25NF10T4 |
N-CHANNEL 100V 0.033 OHM 25A DPAK LOW GATE CHARGE STRIPFET POWER MOSFET
N-CHANNEL 100V 0.033 OHM 25A DPAK LOW GATE CHARGE STRIPFET POWER MOSFET
N-CHANNEL 100V - 0.033ohm - 25A DPAK LOW GATE CHARGE STripFET⑩ POWER MOSFET
N-CHANNEL 100V - 0.033ohm - 25A DPAK LOW GATE CHARGE STripFET POWER MOSFET
N-CHANNEL MOSFET
|
STMicroelectronics
ST Microelectronics
|
| SBR250-10JS |
Schottky Barrier Diode 100V 25A Rectifier
|
Sanyo Semicon Device
|
| NTE5558 NTE5550 NTE5552 NTE5554 |
Silicon controlled rectifier. Peak reverse blocking voltage Vrrm = 400V. Forward current 25A.
Silicon Controlled Rectifiers
Silicon controlled rectifier. Peak reverse blocking voltage Vrrm = 200V. Forward current 25A.
|
NTE[NTE Electronics]
|
| 100JB12L 35MB100A 35MB10A 35MB120A 100JB10L 100JB1 |
10 to 35 Amp Rectifier Bridges
V(rrm): 400V; 25A rectifier bridge
V(rrm): 1200V; 35A rectifier bridge
V(rrm): 100V; 25A rectifier bridge
V(rrm): 1000V; 25A rectifier bridge
V(rrm): 1000V; 10A rectifier bridge
V(rrm): 100V; 10A rectifier bridge
V(rrm): 400V; 10A rectifier bridge
V(rrm): 1200V; 10A rectifier bridge
V(rrm): 50V; 10A rectifier bridge
V(rrm): 200V; 10A rectifier bridge
V(rrm): 600V; 10A rectifier bridge
V(rrm): 800V; 10A rectifier bridge
V(rrm): 1200V; 25A rectifier bridge
V(rrm): 1000V; 35A rectifier bridge
V(rrm): 50V; 25A rectifier bridge
V(rrm): 600V; 25A rectifier bridge
|
IRF[International Rectifier]
|
| FSF150D FSF150R |
25A, 100V, 0.070 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
25A/ 100V/ 0.070 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
|
Intersil Corporation
|
