PART |
Description |
Maker |
LD242 LD242-2 LD242-3 LD242E7800 |
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Lead (Pb) Free Product - RoHS Compliant
|
OSRAM GmbH
|
Q62703-Q1031 LD274 Q62703-Q1820 LD274-2 LD274-3 Q6 |
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter 砷化镓红外Lumineszenzdiode砷化镓红外发射器
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
TLN11007 TLN110F |
INFRARED LED GAAS INFRARED EMITTER
|
Toshiba Semiconductor
|
KEL5002A-A OPE5594A |
GaAs Infrared Emitter
|
List of Unclassifed Manufacturers List of Unclassifed Manufac...
|
LD266 LD267 |
GaAs Infrared Emitter Arrays
|
OSRAM GmbH
|
MTE8080F |
Infrared Emitter 5mm Water Clear Truncated IR Emitter
|
Marktech Optoelectronics MARKTECH[Marktech Corporate]
|
MTE8080P |
5mm Metal Can IR Emitter Infrared Emitter
|
MARKTECH[Marktech Corporate]
|
LD274 |
GaAs Infrared Emitter
|
OSRAM GmbH
|
SFH409-2 Q62702-P1001 Q62702-P1002 Q62702-P860 SFH |
From old datasheet system GaAs Infrared Emitter Mica Film Capacitor; Capacitance:47pF; Capacitance Tolerance: /- 5 %; Working Voltage, DC:300V CAP MICA 43PF 300V SMD 砷化镓红外发射器
|
Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
LNA2901L |
GaAs Infrared Light Emitting Diode 5 mm, 1 ELEMENT, INFRARED LED, 950 nm
|
Panasonic, Corp. PANASONIC[Panasonic Semiconductor]
|
QEC113 QEC112 |
GAAS INFRARED EMITTING DIODE 2.9 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
QT[QT Optoelectronics]
|