| PART |
Description |
Maker |
| G10519-14 |
InGaAs APD with preamp
|
Hamamatsu Corporation
|
| FU-319SPA-C6 |
InGaAs APD PREAMP MODULE FOR THE 1.31 um AND 1.55 um WAVELENGTH RANGE 铟镓砷APD的前置放大器模块，用.31微米.55微米波长范围
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| NR8360JP-BC |
InGaAs APD for OTDR applications. With FC-UPC connector.
30 um InGaAs APD IN DIP PACKAGE FOR OTDR APPLICATION
|
NEC
CEL[California Eastern Labs]
|
| FU-319SPP-C6 |
InGaAs PD PREAMP MODULE FOR THE 1.31 mm AND 1.55 mm WAVELENGTH RANGE 铟镓砷放电前置放大器模块.31毫米.55毫米波长范围
InGaAs PD PREAMP MODULE FOR THE 1.31 um AND 1.55 um WAVELENGTH RANGE
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| FRM3Z232BS FRM3Z232BS-A |
InGaAs-PIN/Preamp Preamp
|
Eudyna Devices Inc
|
| C30659-900-1060-1550NM |
Silicon and InGaAs APD Preamplifier Modules
|
Perkin Elmer Optoelectronics
|
| C30659-900-R8A C30659 C30659-1060-3A C30659-1060-R |
Silicon and InGaAs APD Preamplifier Modules
|
PerkinElmer Optoelectro...
PERKINELMER[PerkinElmer Optoelectronics]
|
| G10342-54 |
InGaAs PIN photodiode with preamp
|
Hamamatsu Photonics
|
| G10518-51 G10518-54 |
InGaAs PIN photodiode with preamp
|
Hamamatsu Corporation
|
| FRM5J141GW |
InGaAs-PIN/Preamp Receiver
|
Eudyna Devices Inc
|
| FRM5J142GW |
InGaAs-PIN/Preamp Receiver
|
EUDYNA[Eudyna Devices Inc]
|
| NR4510UR NR4510UR-AZ |
NECs 050 um InGaAs APD ROSA WITH INTERNAL PRE-AMPLIFIER FOR 2.5 GB/S APPLICATIONS
|
California Eastern Labs
|
