PART |
Description |
Maker |
MGSF2N02E MGSF2N02ELT1 MGSF2N02ELT1G MGSF2N02ELT3 |
2.8 Amps, 20 Volts, N−Channel SOT−23 2.8 A, 20 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-236AB 2.8 Amps, 20 Volts, N-Channel SOT-23 2.8 Amps, 20 Volts, N−Channel SOT−23 Power MOSFET 2.8 Amps, 20 Volts
|
ONSEMI[ON Semiconductor]
|
NTB45N06 NTB45N06T4 NTP45N06 NTP45N06_D NTP45N06D |
Power MOSFET 45 Amps, 60 Volts N?Channel TO?20 and D2PAK Power MOSFET 45 Amps / 60 Volts Power MOSFET 45 Amps, 60 Volts N-Channel TO-220 and D2PAK Power MOSFET 45 Amps, 60 Volts 功率MOSFET四十五安培,60伏特
|
ONSEMI[ON Semiconductor]
|
MGB19N35CL MGP19N35CL |
Ignition IGBT 19 Amps, 350 Volts(19A50V钳位电压,点火绝缘栅双极型晶体管(D2PAK封装 点火IGBT一十九安培50伏特,(9A50V钳位电压,点火绝缘栅双极型晶体管(采用D2PAK封装)) Ignition IGBT 19 Amps, 350 Volts(19A350V钳位电压,点火绝缘栅双极型晶体管(TO-220封装 19 A, 380 V, N-CHANNEL IGBT, TO-220AB Ignition IGBT 19 Amps, 350 Volts(19A锛?50V?充??靛?锛?????缂????????浣??锛?O-220灏??锛?
|
ON Semiconductor
|
NTMS4P01R2 NTMS4P01R2/D NTMS4P01R2-D |
Power MOSFET -4.5 Amps, -12 Volts P-Channel Enhancement-Mode Single SO-8 Package Receptacle With A Standard Tail Power MOSFET -4.5 Amps-12 Volts
|
ON Semiconductor
|
MTW32N20E MTW32N20E-D |
Power MOSFET 32 Amps, 200 Volts N-Channel TO-247 Power MOSFET 32 Amps, 200 Volts(32A,200V的功率MOSFET)
|
ON Semiconductor
|
NTB75N03L09 NTB75N03L09G NTB75N03L09T4 NTP75N03L09 |
Power MOSFET 75 Amps, 30 Volts N-Channel TO-220 and D2PAK Power MOSFET 75 Amps, 30 Volts N-Channel D2PAK
|
ONSEMI[ON Semiconductor]
|
SVZ5.6 SVZ1400 |
100-6500 AMPS 70-4500 VOLTS 73.5-1820 VOLTS 5.6-1400 VOLTS SURGE ARRESTOR MODULE
|
Solid States Devices, Inc. SSDI[Solid States Devices, Inc]
|
1N70-T92-B 1N70-T92-K 1N70L-T92-B 1N70L-T92-K |
1.2 Amps, 700 Volts N-CHANNEL MOSFET
|
Unisonic Technologies
|
UT40N03 UT40N03G-TM3-T UT40N03G-TN3-R UT40N03L-TN3 |
40 Amps, 30 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
MMSF3300-D |
Power MOSFET 11.5 Amps, 30 Volts N-Channel SO-8
|
ON Semiconductor
|
MMSF5N02HD-D |
Power MOSFET 5 Amps, 20 Volts N-Channel SO-8
|
ON Semiconductor
|