| PART |
Description |
Maker |
| MT4S104T |
UHF-SHF Low Noise Amplifier Application
|
Toshiba Semiconductor
|
| MT4S102T |
UHF-SHF Low Noise Amplifier Application
|
Toshiba Semiconductor
|
| 2SK3179 |
N CHANNEL SINGLE GATE MODULATION DOPE TYPE )UHF~SHF BAND LOW NOISE AMPLIFIER APPLICATIONS)
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| EC3H02B |
VHF to UHF Low-Noise Wide-Band Amplifier Applications 甚高频到超高频低噪声宽带放大器应
NPN Epitaxial Planar Silicon Transistor VHF to UHF Low-Noise Wide-Band Amplifier Applications
|
Sanyo Electric Co., Ltd.
Sanyo Semicon Device
|
| 2SC3774 |
NPN Epitaxial Planar Silicon Transistor UHF Low-Noise Amplifier, Wide-Band Amplifier Applications
|
SANYO
|
| 2SC5666 |
UHF to S-band Low-noise Amplifier
|
Sanyo Semiconductor Corporation
|
| MT4S101T07 MT4S101T |
UHF Low Noise Amplifier Application
|
Toshiba Semiconductor
|
| MT3S111 |
VHF-UHF Low-Noise, Low-Distortion Amplifier Applications
|
Toshiba Semiconductor
|
| EC3H07BA |
UHF to S Band Low-Noise Amplifier and OSC Applications
|
Sanyo Semicon Device
|
| MT3S04AT07 |
VHF~UHF Band Low Noise Amplifier Applications
|
Toshiba Semiconductor
|
