| PART |
Description |
Maker |
| NAND01G-A NAND01GW3A NAND01GW3A0AN6 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
|
STMicroelectronics
|
| M58PR512LE M58PR512LE96ZB5 M58PR256LE96ZB5 M58PR00 |
256-Mbit, 512-Mbit or 1-Gbit (】 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories
|
STMicroelectronics
|
| PC28F00AP30TFA PC28F00BP30EFA |
Numonyx? Axcell P30-65nm Flash Memory 512-Mbit, 1-Gbit , 2-Gbit
|
Micron Technology
|
| NAND256W4A NAND256W3A NAND256R4A NAND256R3A NAND51 |
32M X 16 FLASH 3V PROM, 12000 ns, PDSO48
64M X 8 FLASH 1.8V PROM, 15000 ns, PDSO48
128 MBIT, 256 MBIT, 512 MBIT, 1 GBIT (X8/X16) 1.8V, 3V SUPPLY FLASH MEMORIES
64M X 8 FLASH 3V PROM, 12000 ns, PDSO48
128M X 8 FLASH 3V PROM, 12000 ns, PBGA63
|
STMicroelectronics
NUMONYX
|
| SST37VF512 |
(SST37VFxxx) 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Many-Time Programmable Flash
|
Silicon Storage Technology
|
| CY14B104LA |
4-Mbit (512 K X 8/256 K X 16) nvSRAM
|
Cypress Semiconductor
|
| CY14B104LA-ZS20XI CY14B104NA-ZS20XI CY14B104NA-ZS2 |
4-Mbit (512 K x 8/256 K x 16) nvSRAM 20 ns, 25 ns, and 45 ns access times
|
Cypress Semiconductor
http://
|
| CY7C1354C-200AXC CY7C1354C-200BGC CY7C1354C-200AXI |
9-Mbit (256 K × 36/512 K × 18) Pipelined SRAM with NoBL Architecture
9-Mbit (256 K × 36/512 K × 18) Pipelined SRAM with NoBL?/a> Architecture
|
Cypress Semiconductor
|
| CY7C1355C-100BGC CY7C1357C-133AXC CY7C1355C-133AXC |
9-Mbit (256 K x 36 / 512 K x 18) Flow-through SRAM with NoBL Architecture
|
Cypress Semiconductor
|
| STN8810BDS12HPBE STN8810S12 |
STn8810 mobile multimedia application processor with 1-Gbit NAND-Flash and 512-Mbit DDR mobile RAM
|
STMicroelectronics
|
| NAND01G-N NAND01GR4N5 NAND01GR3N6 |
1 Gbit (x8/x16) 2112 Byte Page NAND Flash Memory and 512 Mbit (x16) LPSDRAM, 1.8V, Multi-Chip Package
|
STMICROELECTRONICS[STMicroelectronics]
|
| M36P0R9070E0 |
512 Mbit Flash memory 128 Mbit (Burst) PSRAM
|
Numonyx
|
