| PART |
Description |
Maker |
| 2SC4685 E000978 |
NPN EPITAXIAL TYPE (STROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)
From old datasheet system
STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
|
Toshiba Semiconductor
|
| 2SC2500 E000724 |
From old datasheet system
STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
TRANSISTOR (STROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SA1802 E000561 |
TRANSISTOR (STROBE FLASH/ MEDIUM POWER AMPLIFIER APPLICATIONS)
STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
TRANSISTOR (STROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SA1327A 2SA1327A06 |
Strobe Flash Applications Audio Power Amplifier Applications
|
Toshiba Semiconductor
|
| 2SA135707 2SA1357 |
Strobe Flash Applications Audio Power Amplifier Applications
|
Toshiba Semiconductor
|
| 2SA116009 |
Strobe Flash Applications Medium Power Amplifier Applications
|
Toshiba Semiconductor
|
| 2SA1802 |
Transistor Silicon PNP Epitaxial Type Strobe Flash Applications Medium Power Amplifier Applications
|
TOSHIBA
|
| 2SA1314 |
Transistor Silicon PNP Epitaxial Type (PCT process) Strobe Flash Applications Audio Power Applications
|
TOSHIBA
|
| 2SC3279 |
Transistor Silicon NPN Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier Applications
|
TOSHIBA
|
| AP30G40AEO |
Strobe Flash Applications
|
Advanced Power Electron...
|
| GT5G13106 |
Strobe Flash Applications
|
Toshiba Semiconductor
|
| GT15G101 |
N CHANNEL IGBT (STROBE FLASH APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
