| PART |
Description |
Maker |
| LTC1876 |
High Efficiency, 2-Phase, Synchr., Dual, Step-Down Sw. Contr. W/ Step-Up Reg.
|
Linear
|
| EM484M1684VBA-7FE EM484M1684VBA-75FE EM484M1684VBA |
256Mb (4MBank6) Synchronous DRAM
256Mb (4M??Bank??6) Synchronous DRAM
|
Electronic Theatre Controls, Inc.
|
| K4H560838D-TC/LB0 K4H560838D-TC/LA2 K4H560838D-TC/ |
64M X 4 DDR DRAM, 0.7 ns, PDSO66
Quad Wide Bandwidth High Output Drive Single Supply Op Amp 20-HTSSOP -40 to 125 256Mb
10-Bit, 38 kSPS ADC Serial Out, On-Chip System Clock, 11 Ch. 20-PDIP 256Mb
10-Bit, 38 kSPS ADC Serial Out, On-Chip System Clock, 11 Ch. 20-PLCC 256Mb
10-Bit, 400 kSPS ADC Serial Out, SPI/DSP Compatible I/F, Power Down, 8 Ch. 20-SOIC -40 to 85
10-Bit, 400 kSPS ADC Serial Out, SPI/DSP Compatible I/F, Power Down, 8 Ch. 20-TSSOP -40 to 85
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| MR18R162GAF0 MR16R162GAF0 MR18R1624AF0 MR18R1622AF |
64M X 16 RAMBUS MODULE, DMA184
TVS 500W 6.5V BIDIRECT DO-15 6Mx16显示）2/8/16）件RIMM的模块，基于256Mb阿芯片，32秒银行，16K/32ms参考，.5V
16Mx16显示）2/8/16）件RIMM的模块，基于256Mb阿芯片，32秒银行，16K/32ms参考，.5V
(MR18R1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die
(MR1xR1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die
(16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| HYS72D32000GU-7-A HYS64D32000GU-7-A HYS72D64020GU- |
256MB (32Mx64) PC2100 1-bank
512MB (64Mx72) PC2100 2-bank
512MB (64Mx64) PC2100 2-bank
512MB (64Mx72) PC1600 2-bank
256MB (32Mx72) PC1600 1-bank End-of-Life
512MB (64Mx64) PC1600 2-bank 12MB的（64Mx64）PC1600 2银行
256MB (32Mx72) PC2100 1-bank 56MB的（32Mx72）PC2100 1银行
|
Infineon Technologies AG
|
| HYB18T256400AC-3.7 HYB18T256400AC-5 HYB18T256160AC |
DDR2 SDRAM Components - 256Mb (64Mx4) DDR2 533 (4-4-4) Available 3Q04
DDR2 SDRAM Components - 256Mb (64Mx4) DDR2 400 (3-3-3) Available 3Q04
DDR2 SDRAM Components - 256Mb (16Mx16) DDR2 533 (4-4-4) Available 3Q04
DDR2 SDRAM Components - 256Mb (16Mx16) DDR2 400 (3-3-3) Available 3Q04
DDR2 SDRAM Components - 256Mb (32Mx8) DDR2 533 (4-4-4) Available 3Q04
DDR2 SDRAM Components - 256Mb (32Mx8) DDR2 400 (3-3-3) Available 3Q04
|
Infineon
|
| HYS72V32301GR-7.5 HYS72V64300GR-7.5 HYS72V16300GR- |
3.3V 256MB SDRAM Module(3.3V 256MSDRAM 模块)
3.3V 128MB SDRAM Module(3.3V 128MSDRAM 模块)
3.3V 1GB SDRAM Module(3.3V 1GSDRAM 模块)
3.3V 256MB SDRAM Module(3.3V 256MSDRAM 模块) 3.3 256MB的内存模块（3.3 256M位内存模块）
3.3V 128MB SDRAM Module(3.3V 128MSDRAM 模块) 3.3 128MB的内存模块（3.3V28兆位内存模块
|
SIEMENS AG
|
| EM488M3244VBA-8F |
256Mb SDRAM
|
Electronic Theatre Controls, Inc.
|
| K8A56EBC K8A57EBC K8A57EZC |
256Mb C-die NOR FLASH
|
Samsung semiconductor
|
| NT256S72V89A0G |
256MB SDRAM Module
|
Nanya Technology
|
| HYS72T256000HR-3.7-A |
256MB - 4GB, 240pin
|
Infineon
|
