| PART |
Description |
Maker |
| IRS23364DJTRPBF |
High voltage, high speed power MOSFET and IGBT driver for 3-phase applications
|
International Rectifier
|
| AUIRS2332JTR |
Automotive High Voltage High Speed power MOSFET and IGBT Driver. Compatible down to 3.3V Logic. Deadtime 0.7us.
|
International Rectifier
|
| MG600Q1US65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
|
TOSHIBA
|
| IR2105 IR2105S |
Half Bridge Driver, Single Input, All High Voltage Pins On one Side, Fixed 520ns Deadtime in a 8-lead SOIC package
Half Bridge Driver, Single Input, All High Voltage Pins On one Side, Fixed 520ns Deadtime in a 8-pin DIP package
High Voltage, High Speed Power MOSFET and IGBT Driver
|
IRF[International Rectifier]
|
| MP4211 |
Power MOS FET Module Silicon N Channel MOS Type (L2-pi-MOSV 4 in 1) High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver
|
TOSHIBA
|
| MP4711 |
Power MOS FET Module Silicon N Channel MOS Type (L2-pi-MOSV 4 in 1) High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver
|
TOSHIBA
|
| MP4411 |
Power MOS FET Module Silicon N Channel MOS Type (L2-pi-MOSV 4 in 1) High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver
|
TOSHIBA
|
| MP441107 MP4411 |
High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver
|
Toshiba Semiconductor
|
| GT15Q301 |
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
Silicon N-Channel IGBT for High Power Switching Application(用于大功率转换的N沟道绝缘栅双极型晶体
|
http://
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
| CM150DU-12F |
IGBT MODULES HIGH POWER SWITCHING USE
150 A, 600 V, N-CHANNEL IGBT
|
Mitsubishi Electric Semiconductor
|
| 1SD210FI-FX200R65KF1 FZ200R65KF1 FD200R65KF1-K |
SCALE High Voltage IGBT Driver
|
List of Unclassifed Manufacturers
ETC
|
