| PART |
Description |
Maker |
| H2516.384000BE50GX H2316.384000BE50HX H2516.384000 |
VCXO Wide Frequency Range 3.0V and 5.0V Devices
|
AEL Crystals Ltd
|
| P2781A-B P2781-82-84 |
Wide Input Frequency Range Devices
From old datasheet system
|
ALSC
|
| DSOX2APPBNDL DSOXT3APPBNDL |
Application Bundles Offer Big Savings
|
Keysight Technologies
|
| IDT72T51233L5BB IDT72T51233L5BBI IDT72T51253L6BBI |
2.5V MULTI-QUEUE FLOW-CONTROL DEVICES (32 QUEUES) 36 BIT WIDE CONFIGURATION 1,179,648 bits and 2,359,296 bits
|
IDT[Integrated Device Technology]
|
| 018-220 012-220 048-250 005-220 003-250 N68F N68FA |
Slim type and small occupying area can offer high density P.C.B. technique
Slim type and small occupying area can offer high density P.C.B. technique.
|
HuaXinAn Electronics CO.,LTD
HuaXinAn Electronics CO...
|
| P1707A-08TT P1707A P1707A-08SR P1707A-08ST P1707A- |
Notebook LCD Panel EMI Reduction IC 1707 SERIES, PLL BASED CLOCK DRIVER, 1 TRUE OUTPUT(S), 0 INVERTED OUTPUT(S), PDSO8
Wide Input Frequency Range Devices
From old datasheet system
|
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
|
| VJ15PA0340 VJ32PA0340 VJ15MA0160 VJ15MA0340 VJ13MA |
Transient Voltage Suppression, ESD Protection Devices & EMI Devices
|
AVX Corporation
|
| MICROSMD050F MICROSMD050F-2 |
Specification Status: Released
PolySwitch?PTC Devices
PolySwitch垄莽PTC Devices
|
Tyco Electronics
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| NANOSMDM050F |
PolySwitch PTC Devices / Circuit Protection Devices
|
Tyco Electronics
|
