| PART |
Description |
Maker |
| IMP1233D IMP1810 IMP1811 IMP1812 IMP1815 IMP1816 I |
4.125V power reset
RELAY 024VDC 01A DPDT-XX FORM:2C UC
Bi-Lobe Standard Metal Shell Nano Offset Connector
Low Power 5V/3.0V P Reset
Low Power/ 5V/ P Reset
Low Power, 5V, 楼矛P Reset
Low Power 5V P Reset
Low Power, 5V, P Reset
Low Power, 5V, μP Reset
4.375V power reset
|
IMP INC.
IMP Inc
IMP[IMP, Inc]
IMP[IMP Inc]
|
| DPC-24-1000B20 DPC-10-1000B3 DPC-10-440B2 DPC-16-7 |
POWER TRANSFORMER, 24 VA
POWER TRANSFORMER, 10 VA
POWER TRANSFORMER, 4.4 VA
POWER TRANSFORMER, 1.2 VA
POWER TRANSFORMER, 1 VA
Low Frequency, Open-Style Laminated Concentric Vertical Profile, PC Plug-In Series
|
Pulse Electronics, Corp.
PULSE ELECTRONICS CORP
Pulse A Technitrol Company
Pulse A Technitrol Comp...
|
| BUW36 BUY69A BUY69B BUX48 BUX80 BDX87 BDX88 BDW51 |
Leaded Power Transistor Darlington
Power Transistors 15 A, 45 V, PNP, Si, POWER TRANSISTOR, TO-3
INDUCTOR PWR UNSHIELD 470UH SMT
Certification- 5.2kVDC Isolation- Power Sharing- Pin Compatible with RH & RK Series, SIP DC-DC Converters- UL94V-0 Package M
Leaded Power Transistor General Purpose
|
Central Semiconductor, Corp.
Central Semiconductor Corp.
CENTRAL[Central Semiconductor Corp]
|
| RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大
Single-band power amplifiers
The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
|
| TDA4863-2 TDA4863-2G Q67040-S4620 Q67040-S4621 |
Power Control ICs - PFC-IC for high Output Power in SMD-Package
Power Factor Controller IC for High Power Factor and Low THD
|
INFINEON[Infineon Technologies AG]
|
| MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS
COMPLEMETARY SILICON POWER TRANSISTORS
SILICON NPN TRANSISTOR
HIGH VOLTAGE PNP POWER TRANSISTOR
SILICON NPN POWER DARLINGTON TRANSISTOR
RF Power Field Effect Transistors
880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs
RF LDMOS Wideband Integrated Power Amplifiers
GENERAL PURPOSE L TO X-BAND GaAs MESFET
10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
FREESCALE
NEC
STMICROELECTRONICS[STMicroelectronics]
|
| T1G4012036-FL-15 |
120W Peak Power, 24W Average Power, 36V DC ?3.5 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
| RMPA2271 |
WCDMA/UMTS Power Edge Power Amplifier Module with Integrated Power Detector
|
FAIRCHILD[Fairchild Semiconductor]
|
| 2SA886 2SA0886 |
Power Device - Power Transistors - Others
Silicon PNP epitaxial planar type (For low-frequency power amplification Complementary)
|
PANASONIC[Panasonic Semiconductor]
|
| 2SB0938 2SB0938A 2SB938 2SB938A |
Power Device - Power Transistors - General-Purpose power amplification
|
Panasonic
|
| 2SD2659 |
Power Device - Power Transistors - General-Purpose power amplification
|
Panasonic
|
