| PART |
Description |
Maker |
| PMBT3906YS PMBT3906YS115 |
40 V, 200 mA PNP/PNP general-purpose double transistor
40 V, 200 mA PNP-PNP general-purpose double transistor
40 V, 200 mA PNP/PNP general-purpose double transistor; Package: SOT363 (SC-88); Container: Tape reel smd
|
NXP Semiconductors N.V.
|
| BC856 BC857 |
General Purpose Transistor PNP Silicon(-65V通用型硅PNP晶体 通用硅晶体管进步党（- 65V的通用型硅晶体管进步党
General Purpose Transistor PNP Silicon(-45V??????PNP?朵?绠?
|
ON Semiconductor
|
| JC557 JC556_557_558_3 JC556 JC556B JC557B JC558 JC |
PNP general purpose transistors
From old datasheet system
PNP general purpose transistor(PNP通用型晶体管)
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| BC856BS |
65 V, 100 mA PNP/PNP general-purpose transistor
65 V, 100 mA PNP-PNP general-purpose transistor 100 mA, 65 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
|
NXP Semiconductors N.V.
|
| HL9-100KWTQ HL9-101KWTQ HL9-102KWTQ HL9-1R0KWTQ HL |
1 ELEMENT, 56 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 820 uH, GENERAL PURPOSE INDUCTOR
HIGH CURRENT POWER CHOKES
1 ELEMENT, 100 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 56000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 2.7 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 18 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 10 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 10000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 39 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 27 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 3300 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 1000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 1200 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 2200 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 1500 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 47 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 5.6 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 270 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 4700 uH, GENERAL PURPOSE INDUCTOR
|
RCD COMPONENTS INC.
|
| 2N5193 2N5194 2N5195 |
Leaded Power Transistor General Purpose
(2N5194 / 2N5195) PNP Silicon Transistor
PNP SILICON TRANSISTOR GENERAL PURPOSE POWER
|
Central Semiconductor Corp
|
| CSA950 CSA950O CSA950Y |
0.600W General Purpose PNP Plastic Leaded Transistor. 30V Vceo, 0.800A Ic, 100 - 320 hFE
0.600W General Purpose PNP Plastic Leaded Transistor. 30V Vceo, 0.800A Ic, 160 - 320 hFE
PNP SILICON PLANAR EPITAXIAL TRANSISTOR Audio Power Amplifier Application
|
Continental Device India Limited
|
| HN1A01FUGR HN1A01FU |
Transistor Silicon PNP Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications
TRANSISTOR | BJT | PAIR | PNP | 50V V(BR)CEO | 150MA I(C) | TSOP
|
TOSHIBA
|
| BC858CDXV6 BC858CDXV6T1 BC858CDXV6T5 |
General Purpose PNP Transistor
Dual General Purpose Transistor
|
ONSEMI[ON Semiconductor]
|
| CIT8550 CIT8550A CIT8550C CIT8550B CIT8550D |
0.625W General Purpose PNP Plastic Leaded Transistor. 20V Vceo, 2.000A Ic, 60 - 400 hFE
0.625W General Purpose PNP Plastic Leaded Transistor. 20V Vceo, 2.000A Ic, 60 - 120 hFE
0.625W General Purpose PNP Plastic Leaded Transistor. 20V Vceo, 2.000A Ic, 120 - 240 hFE
0.625W General Purpose PNP Plastic Leaded Transistor. 20V Vceo, 2.000A Ic, 85 - 170 hFE
0.625W General Purpose PNP Plastic Leaded Transistor. 20V Vceo, 2.000A Ic, 200 - 400 hFE
|
Continental Device India Limited
|
|
