| PART |
Description |
Maker |
| BFG93A BFG93A_X BFG93 BFG93A/X BFG93X |
NPN 6 GHz wideband transistors(NPN 6G赫兹 宽带晶体 npn GHz的宽带晶体管（npn型第六代赫兹宽带晶体管）
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| CPH6519 |
NPN NPN
NPN Epitaxial Planar Silicon Composite Transistors Low-Frequency General-Purpose Amplifier, Driver Applications
|
Sanyo Semicon Device
|
| 2SD946 2SD946A 2SD946AQ 2SD946AR 2SD950 2SD951 2SD |
Si NPN triple diffused junction mesa . Line-operated horizontal deflection output.
SI NPN EPITAXIAL PLANAR DARLINGTON 1 A, 50 V, NPN, Si, POWER TRANSISTOR, TO-126
|
PANASONIC[Panasonic Semiconductor]
Panasonic, Corp.
|
| PEMH16 PUMH16 PEMH16-PUMH16-15 |
NPN/NPN resistor-equipped transistors;
NPN-NPN resistor-equipped transistors; R1 = 22 kOhm, R2 = 47 kOhm 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
NPN/NPN resistor-equipped transistors R1 = 22 kΩ, R2 = 47 kΩ
|
NXP Semiconductors N.V.
|
| 2SD389A 2SD389AQ 2SD389P 2SD601 2SD601AR 2SD601AS |
Si NPN epitaxial planar. General amplifier.
Si NPN DIFFUSED JUNCTION MESA 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236
Si NPN diffused juction mesa. Medium power amplifier.
|
Panasonic, Corp.
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
| PBSS4350SS115 |
50 V, 2.7 A NPN/NPN low VCEsat (BISS) transistor; Package: SOT96-1 (SO8); Container: Tape reel smd 2700 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
|
NXP Semiconductors N.V.
|
| 2N5682 2N5681 2N5681SMD |
100V Vce, 1A Ic, 30MHz NPN bipolar transistor
NPN SILICON TRANSISTORS
Expitaxial Planar NPN Transistors In jedec TO-39 Metal Case(大功率、外延平面NPN晶体管（TO-39金属封装，用于通用、放大器、开关电路）)
|
SEME-LAB[Seme LAB]
Semelab(Magnatec)
|
| BC550C BC549B BC549B-D BC549C BC550B |
TRANSISTOR|BJT|NPN|45VV(BR)CEO|100MAI(C)|TO-92
Low Noise Transistors NPN Silicon(硅NPN低噪声晶体管) 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
Low Noise Transistor NPN Silicon(30V硅NPN低噪声晶体管) 低噪声晶体管NPN硅（30V的硅npn型低噪声晶体管）
|
ON Semiconductor
http://
|
| PEMH10 PUMH10 |
NPN/NPN resistor-equipped transistors; R1 = 2.2 k惟, R2 = 47 k惟
NPN/NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ
NPN-NPN resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 47 kOhm NPN-NPN配电阻型晶体管，R1=2.2千欧姆，R2=47千欧
|
NXP Semiconductors N.V.
|
| BC548ABC BC547ABC ON0152 BC546 BC548C BC548 BC546B |
Amplifier Transistor NPN
From old datasheet system
CASE 29-04, STYLE 17 TO-2 (TO-226AA)
Amplifier Transistors(NPN Silicon) 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
ONSEMI[ON Semiconductor]
|
| 2N5330 SDT99703 2N4211 2N5616 SDT8302 2N5625 SDT16 |
30 A, 90 V, NPN, Si, POWER TRANSISTOR
300 V, NPN, Si, POWER TRANSISTOR
20 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-63
5 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-3
30 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-63
10 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-3
5 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-66
5 A, 40 V, NPN, Si, POWER TRANSISTOR, TO-66
5 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-66
20 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-63
10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-61
10 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-3
|
SOLITRON DEVICES INC
|
| BFP25 BFP22 Q62702-F721 Q62702-F621 Q62702-F201 Q6 |
NPN Silicon Transistor with high Reve...
From old datasheet system
NPN Silicon Transistors with High Reverse Voltage
Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
NPN Silicon RF Transisrors
NPN Silicon Transistors (High breakdown voltage l Low collector-emitter saturation voltage) NPN硅晶体管（高耐压l低集电极发射极饱和电压）
|
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
|
