| PART |
Description |
Maker |
| BFS483 Q62702-F1574 Q62702F1574 |
NPN Silicon RF Transistor (For low-noise/ high-gain broadband amplifier at colector current from 2mA to 28mA)
NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifier at colector current from 2mA to 28mA) NPN硅射频晶体管（对于低噪声，高增益的colector2mA至二十八毫安目前的宽带放大器
NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifier at colector current from 2mA to 28mA) 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
TRANSISTOR R.F SOT363
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| DXT690BP5-13 |
45V NPN HIGH GAIN TRANSISTOR PowerDI?5
45V NPN HIGH GAIN TRANSISTOR PowerDI垄莽5
|
Diodes Incorporated
|
| IXBH6N170 IXBT6N170 |
High Voltage, High Gain BIMOSFET?/a> Monolithic Bipolar MOS Transistor
High Voltage, High Gain BIMOSFET⑩ Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| BFP520 Q62702-F1794 Q62702-F1491 |
NPN Silicon RF Transistor )For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA)
NPN Silicon RF Transistor (For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V)
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| NTE63 |
Silicon NPN Transistor High Gain / Low Noise Amp
Silicon NPN Transistor High Gain, Low Noise Amp
L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
|
NTE[NTE Electronics]
|
| BUD42D-D BUD42D-1 |
TRANSISTOR | BJT | NPN | 350V V(BR)CEO | 4A I(C) | TO-251AA
High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability
|
ON Semiconductor
|
| BFR106 Q62702-F1219 |
NPN Silicon RF Transistor (For low noise, high-gain amplifiers For linear broadband amplifiers) UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236
NPN Silicon RF Transistor (For low noise/ high-gain amplifiers For linear broadband amplifiers)
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| IXBH10N170 |
High Voltage/ High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| NTE28 |
Germanium PNP Transistor High Current, High Gain Amplifier
|
NTE[NTE Electronics]
|
| L2SC3837LT1G L2SC3837LT3G L2SC3837LT1G-11 |
High-Frequency Amplifier Transistor Small rbb Cc and high gain
|
Leshan Radio Company
|
| AD600AR-REEL AD600AR-REEL7 AD600JR-REEL AD600JR-RE |
Gain range:0 to 40dB ; -7.5V; 600mW; daual, low noise, wideband variable gain amplifier. For ultrasound and sonar time-gain control, high performance audio and RF AGC systems and signal measurement
|
Analog Devices
|
| BUL642D2 |
High Speed, High Gain NPN Transistor
|
ON Semiconductor
|
