| PART |
Description |
Maker |
| IS41LV32256 IS41LV32256-28PQ IS41LV32256-28TQ IS41 |
x32 EDO Page Mode DRAM X32号，江户页面模式的DRAM
256K x 32 (8-Mbit) EDO DRAM 3.3V, 100/83/66 MHz(3.3V, 100/83/66 MHz,256K x 32带扩展数据输出动态RAM) 256K × 32兆位），江户内存3.3伏，100/83/66兆赫.3伏，100/83/66兆赫56K × 32带扩展数据输出动态内存）
256K x 32 (8-Mbit) EDO DYNAMIC RAM 3.3V, 100/83/66 MHz
|
Integrated Silicon Solution, Inc.
|
| AS4C256K16E0 AS4C256K16E0-30JC AS4C256K16E0-35JC A |
5V 256K x 16 CM0S DRAM (EDO), 50ns RAS access time
5V 256K x 16 CM0S DRAM (EDO), 35ns RAS access time
5V 256KX16 CMOS DRAM (EDO)
5V 256K?6 CMOS DRAM (EDO)
x16EDOPageModeDRAM
5V256KxCMOSDRAM(EDO)
5V 256K x CMOS DRAM (EDO)
5V 256K x 16 CM0S DRAM (EDO), 30ns RAS access time
|
Alliance Semiconductor Corporation
ALSC
|
| NM27C240 NM27C240QE120 |
4 Meg (256K x 16) High Performance CMOS EPROM [Life-time buy]
4,194,304-Bit (256k x 16) High Performance CMOS EPROM
4 /194 /304-Bit (256k x 16) High Performance CMOS EPROM
4,194,304位（256k × 16）高性能的CMOS存储
|
FAIRCHILD[Fairchild Semiconductor]
|
| AS4LC256K16E0-35JC AS4LC256K16E0-35TC AS4LC256K16E |
3.3V 256K x 16 CM0S DRAM (EDO), 60ns RAS access time
3.3V 256K x 16 CM0S DRAM (EDO), 45ns RAS access time
3.3V 256K x 16 CM0S DRAM (EDO), 35ns RAS access time
x16 EDO Page Mode DRAM
|
Alliance Semiconductor
|
| EM614163A-30 EM614163A-40 EM614163TS-30 EM614163TS |
256K x 16 High Speed EDO DRAM
|
Etron Tech
List of Unclassifed Manufacturers
ETRONTECH
|
| ATF22V10 ATF22V10B ATF22V10B-10JC ATF22V10B-10JI A |
High- Performance EE PLD FLASH PLD, 25 ns, PDSO24
High- Performance EE PLD FLASH PLD, 25 ns, PDIP24
Single Supply, Dual SPST Switch FLASH PLD, 15 ns, PDIP24
High- Performance EE PLD FLASH PLD, 15 ns, PDIP24
High- Performance EE PLD FLASH PLD, 15 ns, PDSO24
High- Performance EE PLD FLASH PLD, 10 ns, PDIP24
High- Performance EE PLD FLASH PLD, 15 ns, PQCC28
High- Performance EE PLD FLASH PLD, 10 ns, CQCC28
High- Performance EE PLD FLASH PLD, 15 ns, CDIP24
High- Performance EE PLD FLASH PLD, 7.5 ns, PDIP24
High- Performance EE PLD FLASH PLD, 7.5 ns, PDSO24
High- Performance EE PLD FLASH PLD, 10 ns, PDSO24
3.3V, 1 Output, LVTTL to LVPECL Clock Converter
CAP 470PF 16V 5% X7R SMD-0603 TR-7 PLATED-NI/SN
High-performance EE PLD
|
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
http://
|
| V8DJX232BLT |
2M X 32 High Performance EDO Memory Module(2Mx32高性能EDO存储器模 200万32高性能EDO内存模块2Mx32高性能EDO公司存储器模块）
|
Mosel Vitelic, Corp.
|
| V53C104 V53C104P-12 V53C104Z-70 V53C104Z-70L V53C1 |
HIGH PERFORMANCE, LOW POWER 256K X 4 BIT FAST PAGE MODE CMOS DYNAMIC RAM
High Performance / Low Power 256k x 4 Bit / Fast Page Mode CMOS DRAM
|
MOSEL[Mosel Vitelic, Corp]
|
| V53C832HU50 |
256K X 32 EDO DRAM, 50 ns, PQFP100
|
MOSEL-VITELIC
|
| V53C104BP80 |
HIGH PERFORMANCE, LOW POWER 256K X 4 BIT FAST PAGE MODE CMOS DYNAMIC RAM
|
Mosel Vitelic, Corp
|
| V53C104AK-100L |
HIGH PERFORMANCE, LOW POWER 256K X 4 BIT FAST PAGE MODE CMOS DYNAMIC RAM
|
Mosel Vitelic, Corp.
|
| IS41LV16256B-35K IS41LV16256B-35KL IS41LV16256B-35 |
256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
|
ISSI[Integrated Silicon Solution, Inc]
|
