| PART |
Description |
Maker |
| UPD44325092BF5-E33-FQ1 PD44325092B-15 |
4M X 9 QDR SRAM, 0.45 ns, PBGA165
36M-BIT QDRTM II SRAM 2-WORD BURST OPERATION
|
Renesas Electronics Corporation
|
| UPD44324184F5-E33-EQ2 UPD44324084F5-E33-EQ2 UPD443 |
36M-BIT DDRII SRAM 4-WORD BURST OPERAT 36M条位SRAM条DDRII词爆生产营运
|
NEC Corp.
NEC, Corp.
|
| CY7C1911BV18-278BZXC CY7C1911BV18-278BZXI CY7C1911 |
18-Mbit QDRII SRAM 4-Word Burst Architecture 2M X 9 QDR SRAM, 0.45 ns, PBGA165
18-Mbit QDRII SRAM 4-Word Burst Architecture 2M X 8 QDR SRAM, 0.45 ns, PBGA165
18-Mbit QDRII SRAM 4-Word Burst Architecture 1M X 18 QDR SRAM, 0.45 ns, PBGA165
18-Mbit QDRII SRAM 4-Word Burst Architecture 512K X 36 QDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| CY7C1263V18-300BZI |
36-Mbit QDRII SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 2M X 18 QDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| UPD44324092BF5-E33-FQ1 UPD44324182BF5-E33-FQ1 PD44 |
4M X 9 DDR SRAM, 0.45 ns, PBGA165
2M X 18 DDR SRAM, 0.45 ns, PBGA165
36M-BIT DDR II SRAM 2-WORD BURST OPERATION
|
Renesas Electronics Corporation
|
| R1QKA3618CB R1QKA3636CB R1QEA3636CB R1QEA3618CB R1 |
36-Mbit QDRII SRAM 4-word Burst
|
Renesas Electronics Corporation
|
| CY7C1315KV18-333BZC |
18-Mbit QDRII SRAM Four-Word Burst Architecture
|
Cypress
|
| CYPT1543AV18-250GCMB CYPT1545AV18-250GCMB CYRS1543 |
72-Mbit QDRII SRAM Four-Word Burst Architecture with RadStop™ Technology
|
Cypress
|
| CY7C2262XV18 CY7C2264XV18 CY7C2262XV18-366BZXC |
36-Mbit QDRII Xtreme SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) with ODT
36-Mbit QDR? II Xtreme SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) with ODT
|
Cypress Semiconductor
|
