| PART |
Description |
Maker |
| UPD44324082F5-E33-EQ2 UPD44324362F5-E33-EQ2 UPD443 |
36M-BIT DDRII SRAM 2-WORD BURST OPERATION 36M条位SRAM2条DDRII字爆发运
|
NEC Corp.
NEC, Corp.
|
| UPD44325092BF5-E33-FQ1 PD44325092B-15 |
4M X 9 QDR SRAM, 0.45 ns, PBGA165
36M-BIT QDRTM II SRAM 2-WORD BURST OPERATION
|
Renesas Electronics Corporation
|
| UPD44325364F5-E50-EQ2 UPD44325084 UPD44325084F5-E3 |
36M-BIT QDRII SRAM 4-WORD BURST OPERATION
|
NEC[NEC]
|
| UPD44164362F5-E60-EQ1 UPD44164082 UPD44164082F5-E4 |
18M-BIT DDRII SRAM 2-WORD BURST OPERATION
|
NEC[NEC]
|
| UPD44164364F5-E60-EQ1 UPD44164084 UPD44164084F5-E4 |
18M-BIT DDRII SRAM 4-WORD BURST OPERATION
|
NEC[NEC]
|
| R1QFA7218AB R1QCA7218AB R1QDA7218AB R1QCA7236AB R1 |
72-Mbit DDRII SRAM 2-word Burst
|
Renesas Electronics Corporation
|
| R1QKA3618CB R1QKA3636CB R1QEA3636CB R1QEA3636CBG R |
36-Mbit DDRII SRAM 2-word Burst
|
Renesas Electronics Corporation
|
| R1Q5A3636BBG-60R R1Q5A3618BBG-60R |
36-Mbit DDRII SRAM 4-word Burst
|
Renesas Electronics Corporation
http://
|
| M6MGT331S8BKT M6MGB331S8BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation
|
| MS52C1162A |
65,536-Word × 16-Bit or 131,072-Word × 8-Bit STATIC RAM 1,048,576-Word × 16-Bit or 2,097,152-Word × 8-Bit One Time PROM(64k字6位或128k字位静态RAM 1M字6位或2M字OTPROM)
|
OKI SEMICONDUCTOR CO., LTD.
|
| MSM27C852CZ MSC27C852CZ MSM27C8B52CZ |
524,288-Word x 16-Bit or 1,048,576-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM
From old datasheet system
|
OKI electronic components
OKI electronic componets
OKI SEMICONDUCTOR CO., LTD.
|
