| PART |
Description |
Maker |
| U05NU44 |
TOSHIBA SUPER FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE
|
Toshiba Semiconductor
|
| U1DL49 |
TOSHIBA HIGH EFFICIENCY RECTIFIER (HED) SILICON EPITAXIAL JUNCTION TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
| CR80-040 CR150-100 CR80-020LEADFREE CENTRALSEMICON |
2.5V to 5.5V, 230µA Dual Rail-to-Rail Voltage Output 10-Bit DAC with Parallel Interface in 24-lead TSSOP 80 A, 400 V, SILICON, RECTIFIER DIODE, DO-5
150 A, 1000 V, SILICON, RECTIFIER DIODE, DO-8
80 A, 200 V, SILICON, RECTIFIER DIODE, DO-5
60 A, 200 V, SILICON, RECTIFIER DIODE, DO-5
60 A, 600 V, SILICON, RECTIFIER DIODE, DO-5
60 A, 800 V, SILICON, RECTIFIER DIODE, DO-5
60 A, 400 V, SILICON, RECTIFIER DIODE, DO-5
60 A, 1200 V, SILICON, RECTIFIER DIODE, DO-5
True Bipolar Input, Dual 12-Bit, 2-Channel, Simultaneous Sampling SAR ADC; Package: TSSOP; No of Pins: 24; Temperature Range: Industrial
80 A, 800 V, SILICON, RECTIFIER DIODE, DO-5
|
Central Semiconductor, Corp.
CENTRAL SEMICONDUCTOR CORP
|
| SL22-T1 SL22-T3 SL22 SL24-T3 SL23-T1 SL23-T3 SL24- |
LED RECT 4X12 PURE GRN DIFF 4PIN
2.0A LOW VF SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
|
Won-Top Electronics Co., Ltd.
WTE[Won-Top Electronics]
|
| EFM301B EFM302B EFM303B EFM304B EFM305B EFM306B EF |
3 A, 400 V, SILICON, RECTIFIER DIODE, DO-214AA
3 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AA
SURFACE MOUNT GLASS PASSIVATED SUPER FAST SILICON RECTIFIER VOLTAGE RANGE 50 to 600 Volts CURRENT 3.0 Amperes
3 A, 150 V, SILICON, RECTIFIER DIODE, DO-214AA
|
RECTRON LTD
Rectron Semiconductor
|
| CPR2-040TRLEADFREE CPR2-010TRLEADFREE CPR2-120TRLE |
2 A, 400 V, SILICON, RECTIFIER DIODE
2 A, 100 V, SILICON, RECTIFIER DIODE
2 A, 1200 V, SILICON, RECTIFIER DIODE
2 A, 200 V, SILICON, RECTIFIER DIODE
3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-201AD
|
Central Semiconductor, Corp.
CENTRAL SEMICONDUCTOR CORP
|
| UFT120 UFT12010 UFT12015 UFT12020 UFT12130 UFT1214 |
60 A, 500 V, SILICON, RECTIFIER DIODE
60 A, 700 V, SILICON, RECTIFIER DIODE
ULTRA FAST RECOVERY MODULES 60 A, 100 V, SILICON, RECTIFIER DIODE
60 A, 800 V, SILICON, RECTIFIER DIODE
|
MICROSEMI CORP-COLORADO
MICROSEMI[Microsemi Corporation]
Microsemi, Corp.
MICROSEMI CORP-SCOTTSDALE
|
| VBO36-12NO8 VBO20-16NO2 VBE20-20NO1 FBO40-12N VBO6 |
3 PHASE, 30 A, 1200 V, SILICON, BRIDGE RECTIFIER DIODE
31 A, 1600 V, SILICON, BRIDGE RECTIFIER DIODE
Single Phase Rectifier Bridge with Fast Recovery Epitaxial Diodes (FRED) 20 A, 2000 V, SILICON, BRIDGE RECTIFIER DIODE
Single Phase Rectifier Bridgein ISOPLUS i4-PAC-TM 40 A, 1200 V, SILICON, BRIDGE RECTIFIER DIODE
Single Phase Rectifier Bridge 65 A, 1800 V, SILICON, BRIDGE RECTIFIER DIODE
|
IXYS, Corp.
IXYS CORP
|
| TLOE180AP TLYE180AP TLRE180AP TLSE180P |
Toshiba TLxE180 Series LEDs
TOSHIBA T-1 3/4 InGaAIP Ultra Bright LED
|
MARKTECH[Marktech Corporate]
|
| TLGE262 TLYE262A TLOE262A TLPGE262 TLRE262A |
TOSHIBA T-1 InGaAIP Ultra Bright LED
Toshiba TLxE262 Series LEDs
|
MARKTECH[Marktech Corporate]
|
| TVR4J TVR4N VR4N VR4J |
TOSHIBA Fast Recovery Diode Silicon Diffused Type High Speed Rectifier Applications (fast recovery)
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
|
