| PART |
Description |
Maker |
| CHA2391 CHA2391-99F_00 CHA2391-99F/00 |
36-40GHz Very Low Noise Amplifier
DIO, SWITCH MODE POWER RECTIFIER, MBRD835L, SMT, DPAK36
|
United Monolithic Semicondu...
United Monolithic Semiconductors
|
| BB833 Q62702-B628 |
Silicon Tuning Diode (Extented frequency range up to 2.5 GHz special design for use in TV-SAT indoor units)
Silicon Tuning Diode (Extented frequency range up to 2.5 GHz; special design for use in TV-SAT indoor units)
|
Siemens Group
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| MIE-514H4 514H4 |
GaAlAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE 大功率的GaAIAs的T 1 3 / 4包装红外发光二极
Infrared Emitting Diodes (IRED)
|
Unity Opto Technology Co., Ltd.
UOT[Unity Opto Technology]
|
| 2952790 |
EMG 22-DIO 4E-1N5408
|
PHOENIX CONTACT
|
| 2950103 |
Diode block - EMG 45-DIO 8E
|
PHOENIX CONTACT
|
| 2950077 |
Diode block - EMG 22-DIO 7M
|
PHOENIX CONTACT
|
| LN66LLN66L LN66L |
Opto-Electronic Device - Light Emitting Diodes - Infared Light Emitting Diodes
LN66L (LN66(L)) - GaAs Infrared Light Emitting Diode
|
Panasonic
|
| Q62702-F610 BF979S Q62702-B628 |
Silicon Tuning Diode (Extented frequency range up to 2.5 GHz; special design for use in TV-SAT indoor units) 硅调谐二极管（Extented频率高达2.5千兆特别设计了一种用于电视使用税务总局室内单元
PNP SILICON PLANAR TRANSISTOR
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| NTE2945 |
SM DIO/SMBJ12A SMB UNI-DIR MOSFET的N沟道，增强模式高速开
MOSFET N-Channel, Enhancement Mode High Speed Switch
|
NTE Electronics, Inc.
|
| SBH52414N-FSAN SBH52414Z-FSAN SBH52414G-FSAN SBH52 |
High Power BIDI Optical Standard Module 1310 nm Emitting, 1550 nm Receiving 高功率比迪光学标准模310纳米发光550纳米接收
2 GANG DEEP DEVICE BOX SCA-294
Components and FTTx solutions - Tx 1310nm/Rx 1550nm
High Power BIDI Optical Standard Module 1310 nm Emitting/ 1550 nm Receiving
|
INFINEON[Infineon Technologies AG]
|
| MIE-556L3U MIE-546L3U 556L3U |
Infrared Emitting Diodes (UL Listed)
GaAlAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
