| PART |
Description |
Maker |
| PE4230 PE4230-EK 4230-52 4230 4230-00 4230-21 4230 |
SPDT High Power UltraCMOSRF Switch
SPDT High Power UltraCMOS RF Switch
SPDT High Power UltraCMOS⑩ RF Switch
|
PEREGRINE[Peregrine Semiconductor Corp.]
|
| MRF5S9101NBR1 MRF5S9101NR1 |
GSM/GSM EDGE LATERAL N-CHANNEL RF POWER MOSFETs
|
Freescale Semiconductor
|
| MRF18085AR3 MRF18085ALSR3 |
RF Power Field Effect Transistors
GSM/GSM EDGE 1.80–1.88 GHz, 85 W, 26 V Lateral N–Channel RF Power MOSFET
|
Motorola, Inc.
MOTOROLA[Motorola Inc]
Freescale (Motorola)
|
| CXG1104TN |
High Power Antenna Switch MMIC(SPDT Switch with Logic Control)For Use In Cellular Handsets(大功率天线开关微波集成电带逻辑控制的单刀双掷开关，用于蜂窝式手机）) 高功率天线单片开关（单刀双掷开关逻辑控制），用于蜂窝手机的使用（大功率天线开关微波集成电路（带逻辑控制的单刀双掷开关，用于蜂窝式手机）
High Power SPDT Switch with Logic Control
|
Sony, Corp.
|
| MWIC930 |
MWIC930R1, MWIC930GR1 N-CDMA, W-CDMA, GSM/GSM EDGE, 746-960 MHz, 30 W, 26-28 V RF LDMOS Integrated Power Amplifiers
|
Motorola
|
| TQP4M4004 |
SP4T High Power 2.5V GSM Antenna Switch
|
TRIQUINT[TriQuint Semiconductor]
|
| MW4IC915MBR1 MW4IC915GMBR1 MW4IC915 |
MW4IC915MBR1. MW4IC915GMBR1 GSM/GSM EDGE. N-CDMA. W-CDMA. 860-960 MHz. 15 W. 26 V RF LDMOS Wideband Integrated Power Amplifiers MW4IC915MBR1MW4IC915GMBR1的GSM / GSM的EDGE网络 - CDMA技术。的W - CDMA860-960兆赫15日布什26最小输LDMOS的宽带集成功率放大器
|
飞思卡尔半导体(中国)有限公司
MOTOROLA[Motorola, Inc]
|
| TQP4M4010 |
SP4T High Power GSM-EDGE Antenna Switch With Decoder
|
TRIQUINT[TriQuint Semiconductor]
|
| AS179-000 |
GaAs SPDT Switch 300 kHz-3 GHz Medium Power
PHEMT GaAs IC High Linearity 3 V T/R SPDT Switch 0.1-2.5 GHz
|
Skyworks Solutions Inc.
|
| CXG1189AXR |
High Power SPDT Switch
|
Sony Corporation
|
