| PART |
Description |
Maker |
| TL06107 |
LOW POWER J-FET SINGLE OPERATIONAL AMPLIFIER
|
STMicroelectronics
|
| MC74F86N MC54F86J ON1323 MC74F86 MC74F86J |
Low Input (2.25V-5.5V) 300 kHz Frequency, Synchronous Buck Controller, Source/ Sink, Prebias Operati 10-MSOP-PowerPAD -40 to 85
From old datasheet system
QUAD 2-INPUT EXCLUSIVE-OR GATE FAST SCHOTTKY TTL
|
Motorola, Inc.
MOTOROLA[Motorola Inc]
|
| 2SK3030 2SK3023 2SK3030TENTATIVE |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
Silicon N-Channel Power F-MOS FET
|
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
| AD8244 |
Single-Supply, Low Power, Precision FET Input Quad Buffer
|
Analog Devices
|
| 2SK168 2SK168E 2SK168D 2SK168F |
Silicon N Channel MOS FET
Silicon N-Channel Junction FET
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
TRANSISTOR|JFET|N-CHANNEL|8MA I(DSS)|TO-92
TRANSISTOR|JFET|N-CHANNEL|20MA I(DSS)|TO-92
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管|场效应| N沟道| 12mA的我（直）|2
|
Hitachi Semiconductor
Hitachi,Ltd.
|
| 2SK2688-01 2SK2688-01S |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
N-channel MOS-FET
|
FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
|
| 2SK3029 2SK3022 2SK3029TENTATIVE PANASONICCORPORAT |
Silicon N-Channel Power F-MOS FET 5000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
|
Panasonic, Corp.
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
| AD824ACHIPS AD824AN AD824AN-3V AD824AR AD824AR-14 |
Single Supply, Rail-to-Rail Low Power, FET-Input Op Amp
|
AD[Analog Devices]
|
| AD82206 AD822AR-REEL AD822BR-REEL AD822BR-REEL7 AD |
Single-Supply, Rail-to-Rail Low Power FET-Input Op Amp
|
Analog Devices
|
| MTD20N03HDL MTD20N03HL 20N03HL |
HDTMOS E-FET High Density Power FET DPAK for Surface Mount
TMOS POWER FET LOGIC LEVEL 20 AMPERES 30 VOLTS RDS(on) = 0.035 OHM
|
MOTOROLA[Motorola, Inc]
Motorola, Inc.
|
| MTP3N60E_D ON2606 ON2605 MTP3N60E MTP3N60E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 3.0 AMPERES 600 VOLTS RDS(on) = 2.2 OHMS
From old datasheet system
|
ON Semiconductor
Motorola, Inc.
|
