| PART |
Description |
Maker |
| MDS1100 |
a high power COMMON BASE bipolar transistor.
|
Microsemi Corporation
|
| TPR175 |
high power COMMON BASE bipolar transistor.
|
GHZTECH[GHz Technology]
|
| JTDA50 |
RF Power Transistors: AVIONICS
High power COMMON BASE bipolar transistor.
50 Watts, 36 Volts, Pulsed Avionics 960 - 1215 MHz
|
Advanced Power Technology
GHz Technology
GHZTECH
ETC
List of Unclassifed Manufacturers
|
| UMC3NT1 UMC5NT2 UMC3NT2 |
Dual Common Base Collector Bias Resistor Transistors(偏置电阻晶体
Dual Common Base-Collector Bias Resistor Transistors 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
|
ON Semiconductor
|
| 2SC3121 E000793 |
TRANSISTOR (TV TUNER/ UHF OSCILLATOR/ CONVERTER APPLICATIONS)(COMMON BASE)
TRANSISTOR (TV TUNER, UHF OSCILLATOR, CONVERTER APPLICATIONS)(COMMON BASE)
TV TUNER, UHF OSCILLATOR APPLICATIONS (COMMON BASE)
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
| EMC2DXV5T5G EMC4DXV5T1 EMC4DXV5T1G EMC4DXV5T5 EMC4 |
Dual Common Base-Collector Bias Resistor Transistors(双共基极-集电极偏置电阻晶体管) 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
Dual Common Base−Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
|
ONSEMI[ON Semiconductor]
|
| 1415-7 |
7 W, 20 V, 1430-1540 MHz common base transistor
|
GHz Technology
|
| BUL49A |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
SEME-LAB[Seme LAB]
TT electronics Semelab Limited
|
| BUL54B |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
SEME-LAB[Seme LAB]
TT electronics Semelab Limited
|
| BUL62B |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
SemeLAB
SEME-LAB[Seme LAB]
|
