| PART |
Description |
Maker |
| SP8782 SP8782A SP8782ADG SP8782BMP DES9208901AC DE |
6.0V; 1GHz 16/17, 32/33 multi-modulus divider
1GHz ± 16/17, ±32/33 Multi-Modulus Divider 1GHz的16/17，32/33多模数分频器
TV 4C 4#16 PIN WALL RECP 1GHz的16/17，32/33多模数分频器
1GHz 16/17/ 32/33 Multi-Modulus Divider
1GHz 16/17 / 32/33 Multi-Modulus Divider
1GHz 16/17 32/33 Multi-Modulus Divider
1GHz 16/17, 32/33 Multi-Modulus Divider
1GHz 梅 16/17, 梅32/33 Multi-Modulus Divider
1GHz ÷ 16/17, ÷32/33 Multi-Modulus Divider
|
Mitel Networks, Corp.
MITEL[Mitel Networks Corporation]
Mitel Semiconductor
|
| KH600 KH600AI |
1GHz, Differential Input/Output Amplifier
|
Cadeka Microcircuits LLC.
|
| SY89826LHY SY89826LHYTR SY89826LHI SY89826LHITR SY |
3.3V 1GHz PRECISION 1:22 LVDS FANOUT BUFFER/TRANSLATOR WITH 2:1 INPUT MUX
|
MICREL[Micrel Semiconductor]
|
| SY89230U SY89231U SY89229U SY89228UMG SY89228UMGTR |
1GHz Precision, LVPECL ÷3, ÷5 Clock Divider with Fail-Safe Input and Internal Termination
1GHz Precision, LVPECL 梅3, 梅5 Clock Divider with Fail-Safe Input and Internal Termination
1GHz Precision, LVPECL ±3, ±5 Clock Divider with Fail-Safe Input and Internal Termination
|
Micrel Semiconductor
|
| D2225UK D2225 |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-12.5V-1GHz,Push-Pull)(镀金多用DMOS射频硅场效应5W-12.5V-1GHz,推拉)
METAL GATE RF SILICON FET
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| D2212 D2212UK D2002 D2005 |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(10W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应10W-12.5V-1GHz,单端)
|
SemeLAB
SEME-LAB[Seme LAB]
|
| BF2030W Q62702-F1774 |
Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 5V)
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V)
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| BF1005 Q62702-F1498 SIEMENSAG-Q62702-F1498 |
Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network)
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| D2053UK |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-28V-1GHz,Push-Pull)(镀金多用DMOS射频硅场效应5W-28V-1GHz,推拉)
|
SemeLAB
SEME-LAB[Seme LAB]
|
| D1053 D1053UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(50W-28V-1GHz,Push-Pull)(镀金多用DMOS射频硅场效应50W-28V-1GHz,推挽) 金镀金属多功能硅的DMOS射频场效应管50 28V 1GHz的，推挽式）（镀金多用的DMOS射频硅场效应管（50 28V 1GHz的，推挽式）
METAL GATE RF SILICON FET
|
3M Company
SEME-LAB[Seme LAB]
|
| MICRF005 MICRF005BM |
115kbps 800MHz - 1GHz UHF Receiver
115kbps, 800MHz - 1GHz UHF Receiver
QwikRadioTM 900MHz UHF Receiver
115kbps/ 800MHz - 1GHz UHF Receiver
|
Micrel Semiconductor,Inc.
MICREL[Micrel Semiconductor]
|
| ADG918BCP ADG919BCP ADG919 ADG918 ADG918BRM ADG919 |
Wideband, 43dB Isolation 1GHz, CMOS 1.65 V to 2.75V, 2:1 Mux/SPDT Switches 宽带，四三分贝隔GHz时的CMOS 1.65 V.75V的，2:1复用/ SPDT开
Wideband 43dB Isolation 1GHz CMOS 1.65 V to 2.75V 2:1 Mux/SPDT Switches
Wideband/ 43dB Isolation 1GHz/ CMOS 1.65 V to 2.75V/ 2:1 Mux/SPDT Switches
Wideband, 43 dB Isolation @ 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT Switches
|
Analog Devices, Inc.
AD[Analog Devices]
|
