PART |
Description |
Maker |
STB8NM60 STP8NM60FP STD5NM60 STD5NM60-1 STP8NM60 |
N-CHANNEL 650V Tjmax-0.9ohm-8A TO-220/FP/D/IPAK/D2PAK STripFET II MOSFET
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
FQPF6N80C FQP6N80C |
800V N-Channel Advance Q-FET C-Series 800V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
FQA7N80C |
800V N-Channel MOSFET 7 A, 800 V, 1.9 ohm, N-CHANNEL, Si, POWER, MOSFET 800V N-Channel Advance Q-FET C-Series
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
STD1NB80- STD1NB80-1 6190 STD1NB80 |
N-CHANNEL 800V - 16 OHM - 1A - IPAK POWERMESH MOSFET N-CHANNEL 800V - 16 OHM - 1A - DPAK/IPAK POWERMESH MOSFET N - CHANNEL 800V - 16ohm - 1A - IPAK PowerMESH MOSFET N - CHANNEL 800V - 16 - 1A - IPAK PowerMESH TM MOSFET N-CHANNEL POWER MOSFET From old datasheet system
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
STB6NA80 4233 STB6NA80-1 STB6NA80T4 |
TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 5.7A I(D) | TO-263AB TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 5.7A I(D) | TO-262VAR N-CHANNEL Power MOSFET N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR From old datasheet system
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
FQA10N80C |
800V N-Channel MOSFET 800V N-Channel Advance Q-FET C-Series
|
FAIRCHILD[Fairchild Semiconductor] FAIRCHILD SEMICONDUCTOR CORP
|
FQP7N80C FQPF7N80C |
CONN 26POS 2MM SOCKET R/A PC MT 800V N-Channel Advance Q-FET C-Series 800V N-Channel MOSFET CONN 26POS 2MM SOCKET STR PC SMD 6.6 A, 800 V, 1.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
FAIRCHILD SEMICONDUCTOR CORP FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor, Corp.
|
IRFPE40 IRFPE40PBF |
800V Single N-Channel HEXFET Power MOSFET in a TO-247AC package Power MOSFET(Vdss=800V, Rds(on)=2.0ohm, Id=5.4A)
|
International Rectifier
|
IRFK4HE50 |
800V,26A,N-Channel HEXFET Power MOSFET(800V,26A,N沟道 HEXFET 功率MOS场效应管) 800V的,26A,N沟道HEXFET功率MOSFET00V的,26A条,沟道的HEXFET功率马鞍山场效应管)
|
International Rectifier, Corp.
|
STQ1NK80ZR-AP STN1NK80Z STD1NK80Z-1 STD1NK80Z STD1 |
0.3 A, 800 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-92 N-CHANNEL 800V - 13 ヘ - 1 A TO-92 /SOT-223/DPAK/IPAK Zener - Protected SuperMESH⑩ MOSFET N-CHANNEL 800V - 13 Ω - 1 A TO-92 /SOT-223/DPAK/IPAK Zener - Protected SuperMESH MOSFET N-CHANNEL 800V - 13 Ω - 1 A TO-92 /SOT-223/DPAK/IPAK Zener - Protected SuperMESH?/a> MOSFET
|
STMicroelectronics
|
IRFBE30 IRFBE30PBF |
800V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=800V, Rds(on)=3.0ohm, Id=4.1A) Power MOSFET(Vdss=800V/ Rds(on)=3.0ohm/ Id=4.1A)
|
International Rectifier
|
2SK956 2SK1010 2SK1507-01 2SK958 2SK1547-01 2SK138 |
TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 4A I(D) | TO-247 晶体管| MOSFET的| N沟道| 800V的五(巴西)直| 4A条(丁)|47 Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管| MOSFET的| N沟道| 500V五(巴西)直| 6A条(丁)|20 TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 3A I(D) | TO-247 MOSFET transistors TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 9A I(D) | TO-247 Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset From old datasheet system TRANSISTOR,MOSFET,N-CHANNEL,600V V(BR)DSS,9A I(D),TO-220 TRANSISTOR|MOSFET|N-CHANNEL|500VV(BR)DSS|6AI(D)|TO-220
TRANSISTOR,MOSFET,N-CHANNEL,800V V(BR)DSS,9A I(D),TO-247
|
Toshiba, Corp. Mallory Sonalert Products, Inc. Fuji Semiconductors, Inc.
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