| PART |
Description |
Maker |
| STM915-16 |
RF POWER MODULE GSM MOBILE APPLICATIONS
|
ST Microelectronics
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| MF1173V-1 |
FOR GSM MOBILE TELEPHONE, Tx
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| CGY60 Q62702G-39 |
GaAs MMIC (Low noise preamplifier for mobile communication PCN, DECT, GSM in 2.7V to 6V systems)
From old datasheet system
GaAs MMIC (Low noise preamplifier for mobile communication PCN, DECT, GSM in 2.7V to 6V systems) 砷化镓微波单片集成电路（低移动通信PCN中的DECT，在2.7VV系统GSM噪声前置放大器）
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
| MRFIC1859 |
Dual-Band GSM 3.6V Integrated RF Power Amplifier(GSM 3.6V集成式射频功
|
Motorola, Inc.
|
| MRF18085AL |
1805鈥?880 MHz, 85 W, 26 V GSM/GSM EDGE Lateral N鈥揅hannel RF Power MOSFETs
|
MOTOROLA
|
| RF3160 RF3160PCBA |
DUAL-BAND GSM/DCS POWER AMP MODULE
|
RFMD[RF Micro Devices]
|
| PF0140 |
MOSFET POWER AMPLIFIER MODULE FOR GSM HANDY PHONE
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
| MRF18085AR3 MRF18085ALSR3 |
RF Power Field Effect Transistors
GSM/GSM EDGE 1.80–1.88 GHz, 85 W, 26 V Lateral N–Channel RF Power MOSFET
|
Motorola, Inc.
MOTOROLA[Motorola Inc]
Freescale (Motorola)
|
| RF3110 RF3110PCBA |
TRIPLE-BAND GSM/DCS/PCS POWER AMP MODULE
|
RFMD[RF Micro Devices]
|
| TQM7M5002 |
Quad-Band GSM/EDGE Polar Power Amplifier Module
|
TriQuint Semiconductor
|
| MMM6025 |
Quad-Band GSM/GPRS Power Amplifier Front-End Module
|
Freescale Semiconductor
|
