| PART |
Description |
Maker |
| GBU8M GBU8J-BP GBU8K-BP GBU8M-BP GBU8J GBU8D-BP GB |
8 Amp Single Phase Glass Passivated Bridge Rectifier 50 to 1000 Volts
RECT BRIDGE GPP 8A 400V GBU 8 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
RECT BRIDGE GPP 8A 600V GBU 8 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
RECT BRIDGE GPP 8A 800V GBU 8 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
RECT BRIDGE GPP 8A 50V GBU 8 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE
RECT BRIDGE GPP 8A 100V GBU 8 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE
|
Micro Commercial Compon...
天津环球磁卡股份有限公司
Micro Commercial Components, Corp.
|
| NTP52N10 NTP52N10G |
Power MOSFET 60 Amps, 100 Volts
|
ON Semiconductor
|
| 7N10G-TN3-R 7N10L-AA3-R 7N10L-TN3-R 7N10G-AA3-R |
7 Amps, 100 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| MGB19N35CL MGP19N35CL |
Ignition IGBT 19 Amps, 350 Volts(19A50V钳位电压，点火绝缘栅双极型晶体管（D2PAK封装 点火IGBT一十九安培50伏特，（9A50V钳位电压，点火绝缘栅双极型晶体管（采用D2PAK封装））
Ignition IGBT 19 Amps, 350 Volts(19A350V钳位电压，点火绝缘栅双极型晶体管（TO-220封装 19 A, 380 V, N-CHANNEL IGBT, TO-220AB
Ignition IGBT 19 Amps, 350 Volts(19A锛?50V?充??靛?锛?????缂????????浣??锛?O-220灏??锛?
|
ON Semiconductor
|
| MTB40N10E-D |
Power MOSFET 40 Amps, 100 Volts N-Channel D2PAK
|
ON Semiconductor
|
| MTD9N10D MTD9N10E MTD9N10E1 MTD9N10ET4 MTD9N10E-D |
Power MOSFET 9 Amps, 100 Volts N-Channel DPAK
|
ON Semiconductor
|
| MTD6P10E-D |
Power MOSFET 6 Amps, 100 Volts P-Channel DPAK
|
ON Semiconductor
|
| MTP27N10E-D |
Power MOSFET 27 Amps, 100 Volts N-Channel TO-220
|
ON Semiconductor
|
| SDR951E |
60 AMPS 100 - 200 VOLTS 35 nsec HYPER FAST RECTIFIER
|
SOLID STATE DEVICES INC
|
| SDR622CTJ SDR620CTJ SDR621CTJ |
40 AMPS 100 - 200 VOLTS 35 nsec HYPER FAST CENTERTAP RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
| SPMR527M10 SPMR527 SPMR527B04 SPMR527B10 SPMR527F0 |
320/400 Amps 100/30 Volts 3 PHASE BRIDGE POWER MODULE
|
SSDI[Solid States Devices, Inc]
|
