PART |
Description |
Maker |
SLD-2000 |
12 Watt Discrete LDMOS FET-Bare Die
|
sirenza.com SIRENZA[SIRENZA MICRODEVICES]
|
0809LD60P |
Compant High-Insulation Power Relay, Polarized, 10A 60瓦,28V的,1 GHz的LDMOS的场效应 60 Watt / 28V / 1 Ghz LDMOS FET 60 WATT, 28V, 1 GHz LDMOS FET
|
Electronic Theatre Controls, Inc. GHZ Technology ETC[ETC] List of Unclassifed Manufacturers
|
SLD-1026Z |
3 Watt Discrete LDMOS Device Plastic Surface Mount Package
|
sirenza.com
|
0809LD120 |
120 Watt / 28V / 1 Ghz LDMOS FET 120 WATT 28V 1 GHz LDMOS FET 120 WATT, 28V, 1 GHz LDMOS FET
|
GHZ Technology ETC[ETC] List of Unclassifed Manufacturers
|
PBG |
Dual Linear Bar Graph, Two Separate Bar Graphs, Continuous but Precisely Controlled Bar Length
|
Vishay
|
2SJ211 2SJ211-T2B 2SJ211-L 2SJ211-T1B |
P-CHANNEL MOS FET FOR SWITCHING Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0621-7 00; No. of Positions: 8; Connector Type: Panel
|
NEC[NEC] NEC Corp.
|
SLD2083CZ |
10 Watt high performance LDMOS transistor designed for operation to 2700MHz
|
List of Unclassifed Manufacturers ETC[ETC]
|
TGF2023-05 |
25 Watt Discrete Power GaNon SiCHEMT
|
TriQuint Semiconductor
|
NE5531079A-T1 NE5531079A-T1-A NE5531079A-T1A-A |
7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS SILICON POWER MOS FET
|
California Eastern Labs
|
TGF2023-2-01 |
6 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
PXAC192908FV PXAC192908FV-15 |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|